APPARATUS AND METHOD FOR ACTIVATION OF COMPONENTS OF AN ENERGIZED OPHTHALMIC LENS
    131.
    发明申请
    APPARATUS AND METHOD FOR ACTIVATION OF COMPONENTS OF AN ENERGIZED OPHTHALMIC LENS 有权
    用于激活能量眼镜的组件的装置和方法

    公开(公告)号:US20100103369A1

    公开(公告)日:2010-04-29

    申请号:US12577322

    申请日:2009-10-12

    Abstract: This present invention provides apparatus and methods for the activation of an energized ophthalmic lens. In some embodiments, the present invention provides for activation and deactivation of one or more components via wireless communication with an activation unit external to the ophthalmic lens. In some embodiments, an energized ophthalmic lens contains components which detect external signals, process the detected signal and activate components that change optical characteristics via the control of electrical energy.

    Abstract translation: 本发明提供用于激活眼球透镜的装置和方法。 在一些实施例中,本发明提供通过与眼科镜片外部的激活单元的无线通信来激活和去激活一个或多个组件。 在一些实施例中,通电眼科镜片包含检测外部信号的组件,处理检测到的信号并激活经由电能的控制来改变光学特性的组件。

    Field Effect Semiconductor Diodes and Processing Techniques
    133.
    发明申请
    Field Effect Semiconductor Diodes and Processing Techniques 审中-公开
    场效应半导体二极管和处理技术

    公开(公告)号:US20100029048A1

    公开(公告)日:2010-02-04

    申请号:US12578443

    申请日:2009-10-13

    Abstract: Field effect semiconductor diodes and improved processing techniques for forming the field effect semiconductor diodes having semiconductor layers forming a source, a body and a drain of a field effect device, the semiconductor layers forming pedestals having an insulating layer and a gate on sides thereof vertically spanning the body and a part of the source and drain layers, and a conductive contact layer over the pedestals making electrical contact with the drain and the gate, the conductive layer being in contact with the body at least one position on each pedestal. The conductive layer may be in contact with the body through at least one opening in the source layer, or the source layer may be a discontinuous doped layer, the body layer extending between the discontinuous doped layer forming the source layer to be in electrical contact with the conductive layer. Other aspects and variations of the invention are disclosed.

    Abstract translation: 场效应半导体二极管和用于形成场效应半导体二极管的改进的处理技术,半导体二极管具有形成场效应器件的源极,体和漏极的半导体层,半导体层形成具有绝缘层的基座和在其侧面上的栅极垂直跨越 所述主体和所述源极和漏极层的一部分以及在所述基座上与所述漏极和所述栅极电接触的导电接触层,所述导电层与所述主体在每个基座上的至少一个位置接触。 导电层可以通过源层中的至少一个开口与本体接触,或者源层可以是不连续掺杂层,主体层在形成源极的不连续掺杂层之间延伸以与 导电层。 公开了本发明的其它方面和变型。

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