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公开(公告)号：US20250157205A1
公开(公告)日：2025-05-15
申请号：US18934024
申请日：2024-10-31
Inventor： Jae seok CHOI , Manjin KIM , SangHyun KIM , Woohyeok KIM , Insoo KIM , Min Jung LEE , Jaesung RIM , Deun Sol JUNG , Minsu CHO , Sunghyun CHO
Abstract: A method and apparatus with image enhancement using a base image are provided. The method includes: extracting, by a spatial feature extractor, intra-image spatial feature representations from respective image frames of a burst image set; generating inter-image temporal feature representations based on a local similarity between the spatial feature representations; determining temporal-spatial feature representations of the respective image frames by fusing the spatial feature representations with the temporal feature representations; selecting a base image frame from among the image frames based on the temporal-spatial feature representations; and generating an enhanced image by performing an image enhancement operation on the burst image set based on the base image frame.
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公开(公告)号：US20250140336A1
公开(公告)日：2025-05-01
申请号：US18687883
申请日：2022-06-10
Inventor： Toohyon CHO , Chan Kyu PARK , Dongwoo KIM , Jaeseung HEO , Jungwoo SON , Hwanjo YU
Abstract: The present disclosure relates to a system and method for discovering candidate materials for treatment.
According to an embodiment, the system for discovering candidate materials for treatment includes a prediction system that inputs first graph data of a target protein and second graph data of the candidate materials to a prediction model and determines whether the candidate materials are candidate materials for treatment of the target protein based on an output value output from the prediction model in response to the first and second graph data, in which the prediction model may be a graph neural networks (GNN)-based model for predicting presence or absence of binding between the target protein and the candidate material.-
公开(公告)号：US20250140313A1
公开(公告)日：2025-05-01
申请号：US18758245
申请日：2024-06-28
Inventor： Seyoung KIM , Byoungwoo LEE
IPC: G11C13/00
Abstract: Disclosed a device-based cross point array and a method of operation therefor. The method relates to a method for updating a cross point array implemented as a device where a potentiation region and a depression region are separated, and the method is performed by a control logic. The method includes: in a first cycle, controlling lines where positive values are applied among first lines, in ON state, and applying a first voltage pulse at each of second lines intersecting with the first lines based on an applied value; and in a second cycle, controlling lines where negative values are applied among the first lines, in ON state, and applying a second voltage pulse at each of the second lines based on an applied value.
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公开(公告)号：US20250139345A1
公开(公告)日：2025-05-01
申请号：US18814380
申请日：2024-08-23
Applicant: RESEARCH COOPERATION FOUNDATION OF YEUNGNAM UNIVERSITY , POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
Inventor： Hyun Chul CHOI , Chang Hyeon AN , Rock Hyun BAEK , Hyeok YUN
IPC: G06F30/337 , G06F119/06 , G06F119/18
Abstract: A machine-learning method for semiconductor process optimization may include inputting semiconductor-related parameters into each of first neural network models and outputting, based on the semiconductor-related parameters, a predicted figure of merit of a semiconductor device as a first output value from each of the first neural network models. After a semiconductor manufacturing process is performed with a semiconductor manufacturing parameter, electrical measurement parameter values may be measured using one or more measuring devices. The semiconductor-related parameters may include electrical measurement parameter values measured on one or more semiconductor devices. The method may also utilize a feedback loop between an output and an input of the first neural network models so that the electrical measurement parameter values can be updated based on an output value of the first neural network models. A second neural network model may also be used. A computing device and a system are also disclosed.
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公开(公告)号：US20250131652A1
公开(公告)日：2025-04-24
申请号：US18908371
申请日：2024-10-07
Inventor： Seungyong LEE , Wonjong JANG , Hyomin KIM , Yucheol JUNG
IPC: G06T17/20 , G06T3/4007 , G06T3/4046 , G06T7/50 , G06T15/02
Abstract: A stylized 3D mesh generation device may comprise: a memory for storing at least one or more instructions; a processor for executing the at least one or more instructions; a first neural network for generating a per-pixel feature vector based on a 2D input image and a target style; and a second neural network for generating a surface normal map corresponding to a 3D mesh of the 2D input image based on the per-pixel feature vector, wherein the processor generates a stylized 3D mesh of the 2D input image based on the surface normal map, and the second neural network generates and outputs the surface normal map applied with the target style based on the per-pixel feature vector.
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Patent Agency Ranking
126.发明授权公开(公告)号：US12283953B2
公开(公告)日：2025-04-22
申请号：US18060223
申请日：2022-11-30
Inventor： Seokhyeong Kang , Youngchang Choi , Sunmean Kim , Kyongsu Lee
IPC: H03K19/094 , G11C11/41 , H03K19/0185 , H03K19/0944
Abstract: Disclosed is an inverter which includes a first P-MOS transistor connected between a node receiving a drain voltage and a first path node and operated based on an input voltage, a first N-MOS transistor connected between the first path node and an output terminal outputting an output voltage and operated based on the drain voltage, a second P-MOS transistor connected between the output terminal and a second path node and operated based on a ground voltage, a second N-MOS transistor connected between the second path node and a node receiving the ground voltage and operated based on the input voltage, a third P-MOS transistor connected between the first path node and the second path node and operated based on the input voltage, and a third N-MOS transistor connected between the first path node and the second path node and operated based on the input voltage.
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公开(公告)号：US20250123164A1
公开(公告)日：2025-04-17
申请号：US18731062
申请日：2024-05-31
Inventor： Unyong JEONG , Hyeongseok CHOI
Abstract: A stretchable ion-gel sensor and a method of preparing the same are provided. The stretchable ion-gel sensor includes an ion-gel layer, an upper electrode layer disposed on a top surface of the ion-gel layer, and a lower electrode layer disposed on a bottom surface of the ion-gel layer, wherein each of the upper electrode layer and the lower electrode layer includes a first metal particle/polymer layer and a second metal particle/polymer layer.
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公开(公告)号：US12277676B2
公开(公告)日：2025-04-15
申请号：US17770993
申请日：2020-11-11
Inventor： Seung Yong Lee , Sung Hyun Cho , Hyeong Seok Son
IPC: G06K9/00 , G06N3/045 , G06N3/0455 , G06N3/0464 , G06N3/0475 , G06N3/08 , G06N3/088 , G06T3/4046 , G06T5/00 , G06T5/50 , G06T5/60 , G06T5/90 , G06V10/44 , G06V10/778 , G06V10/82 , G06V10/98 , G06N3/09
Abstract: An image processing method and apparatus based on machine learning are disclosed. The image processing method based on machine learning, according to the present invention, may comprise the steps of: generating a first corrected image by inputting an input image to a first convolution neural network; generating an intermediate image on the basis of the input image; performing machine learning on a first loss function of the first convolution neural network on the basis of the first corrected image and the intermediate image; and performing machine learning on a second loss function of the first convolution neural network on the basis of the first corrected image and a natural image.
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公开(公告)号：US12274166B2
公开(公告)日：2025-04-08
申请号：US17237453
申请日：2021-04-22
Inventor： Dae Sung Chung , Ju Hee Kim
Abstract: Provided is a photosensitive material and a photodetector including the same. According to the present invention, the photodetector may include a photoactive layer having a photocurrent density of at most about 10−6 A/cm2 under a first incidence condition, and having a photocurrent density of at least about 10−4 A/cm2 under a second incidence condition. The wavelength of light under the second incidence condition is the same as the wavelength of light under the first incidence condition, and the intensity of light under the second incidence condition may be greater than the intensity of light under the first incidence condition.
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公开(公告)号：US12274108B2
公开(公告)日：2025-04-08
申请号：US17537993
申请日：2021-11-30
Inventor： Jun Hyung Lim , Yong-Young Noh , Soyoung Koo , Hyungjun Kim , Huihui Zhu
Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.
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