公开(公告)号：US09659985B2

公开(公告)日：2017-05-23

申请号：US14854715

申请日：2015-09-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14634 ,  H01L27/1469

Abstract: An integrated circuit includes a first semiconductor device, a second semiconductor device, and a metal shielding layer. The first semiconductor device includes a first substrate and a first multi-layer structure, and the first substrate supports the first multi-layer structure. The second semiconductor device includes a second substrate and a second multi-layer structure, and the second substrate supports the second multi-layer structure. The metal shielding layer is disposed between the first multi-layer structure and the second multi-layer structure, wherein the metal shielding layer is electrically connected to the second semiconductor device.

公开(公告)号：US09461089B2

公开(公告)日：2016-10-04

申请号：US15050819

申请日：2016-02-23

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu ,  Yun-Wei Cheng

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Abstract translation: 公开了半导体图像传感器装置的制造方法。 该方法包括提供具有像素区域，外围区域和接合焊盘区域的基板。 基板还具有与第一侧相对的第一侧和第二侧。 像素区域包含辐射感测区域。 该方法还包括在焊盘区域中形成接合焊盘; 以及至少在所述像素区域中，在形成所述焊盘之后，在所述衬底的所述第二侧上形成阻光结构。

公开(公告)号：US09368531B2

公开(公告)日：2016-06-14

申请号：US14308760

申请日：2014-06-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chiu-Jung Chen ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个遮光结构设置在基板的第二侧上。 钝化层涂覆在每个遮光结构的顶表面和侧壁上。 多个间隔物设置在涂覆在遮光结构的侧壁上的钝化层的部分上。

公开(公告)号：US09281338B2

公开(公告)日：2016-03-08

申请号：US14261472

申请日：2014-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chiu-Jung Chen ,  Yun-Wei Cheng ,  Volume Chien ,  Kuo-Cheng Lee ,  Chun-Hao Chou ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 辐射感测区域被多个间隙隔开。 多个辐射阻挡结构设置在衬底的第二侧上。 每个辐射阻挡结构与相应的一个间隙对准。 多个滤色器设置在辐射阻挡结构之间。

公开(公告)号：US20150311248A1

公开(公告)日：2015-10-29

申请号：US14261481

申请日：2014-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14698

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个隔离结构分别设置在两个相应的辐射感测区域之间。 隔离结构从基板的第二侧突出。