公开(公告)号：US20150187570A1

公开(公告)日：2015-07-02

申请号：US14467688

申请日：2014-08-25

Applicant: Texas Instruments Incorporated

Inventor： Asad Mahmood HAIDER ,  John Britton ROBBINS

IPC: H01L21/02

CPC classification number: H01L21/02087 ,  B05D1/005 ,  H01L21/0206 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02334 ,  H01L21/6715 ,  H01L28/55

Abstract: Use of a non-solvent for the edge bead removal of spin-coated PZT or PLZT thinfilms, eliminates swelling of the exposed edges of the PZT or PLZT thinfilms and eliminates delamination and formation of particle defects in subsequent bake and anneal steps.

Abstract translation: 使用非溶剂去除旋涂PZT或PLZT薄膜的边缘珠，消除PZT或PLZT薄膜的暴露边缘的溶胀，并消除后续烘烤和退火步骤中的分层和颗粒缺陷的形成。

公开(公告)号：US20150001087A1

公开(公告)日：2015-01-01

申请号：US13928141

申请日：2013-06-26

Applicant: Novellus Systems, Inc.

Inventor： Daniel Mark Dinneen ,  James E. Duncan

IPC: H01L21/288 ,  H01L21/66 ,  H01L21/306

CPC classification number: C25D17/001 ,  C25D21/10 ,  C25D21/12 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67253 ,  H01L21/76877

Abstract: Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Abstract translation: 本文公开了用于在晶片上形成金属层的电镀系统，其包括电镀模块和晶片边缘成像系统。 电镀模块可以包括用于在电镀期间容纳阳极和电镀溶液的电池，以及用于在电镀期间将晶片保持在电镀溶液中并旋转晶片的晶片保持器。 晶片边缘成像系统可以包括用于通过不同的方位取向保持和旋转晶片的晶片保持器，照相机，其被定向成在晶片保持和旋转时获得晶片的工艺边缘的多个方位角分离的图像（处理边缘对应于 形成在晶片上的金属层的外边缘）和用于确定边缘排除距离的图像分析逻辑，其中边缘排除距离是晶片边缘和处理边缘之间的距离。

公开(公告)号：US20140346391A1

公开(公告)日：2014-11-27

申请号：US14357689

申请日：2012-10-31

Applicant: CHEIL INDUSTRIES INC.

Inventor： Bong-Hwan Kim ,  Taek-Soo Kwak ,  Jin-Hee Bae ,  Hui-Chan Yun ,  Sang-Hak Lim ,  Sang-Kyun Kim ,  Jin-Wook Lee

IPC: C09K13/00 ,  H01L21/02

CPC classification number: C09K13/00 ,  C08G77/62 ,  C09D183/16 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31111

Abstract: Provided is a rinse solution for a hydrogenated polysiloxazane thin film including an additive selected from an alcohol-based solvent, an ester-based solvent, a silanol-based solvent, an alkoxysilane-based solvent, an alkylsilazane-based solvent, and a combination thereof in an amount of 0.01 wt % to 7 wt % based on the total amount of the rinse solution.

Abstract translation: 本发明提供了一种氢化聚硅氧氮烷薄膜的漂洗溶液，其包括选自醇系溶剂，酯系溶剂，硅烷醇系溶剂，烷氧基硅烷系溶剂，烷基硅氮烷系溶剂及其组合的添加剂 相对于冲洗溶液的总量为0.01重量％〜7重量％。

公开(公告)号：US20140190529A1

公开(公告)日：2014-07-10

申请号：US13857883

申请日：2013-04-05

Applicant: Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

Inventor： Kousik Ganesan ,  Shanthinath Ghongadi ,  Tariq Majid ,  Aaron Labrie ,  Steven T. Mayer

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/6708 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/32134 ,  H01L21/67745 ,  H01L21/68735 ,  H01L21/68785

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract translation: 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。

公开(公告)号：US08658937B2

公开(公告)日：2014-02-25

申请号：US12986914

申请日：2011-01-07

Applicant: Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

Inventor： Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

IPC: B23K26/36 ,  H01L21/00

CPC classification number: H01L21/268 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0676 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/123 ,  B23K26/142 ,  G03F7/2028 ,  H01L21/02087 ,  H01L21/6708

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing solvent and/or abrasive methods and thus will improve die yield.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统准确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去加工副产物。 本发明允许对边缘排除区进行精确控制，导致晶片上可用的管芯数量的增加。 用本发明的晶片边缘加工替代了现有的溶剂和/或研磨方法，从而提高了模具产量。

公开(公告)号：US20140051255A1

公开(公告)日：2014-02-20

申请号：US14065018

申请日：2013-10-28

Applicant: Lam Research Corporation

Inventor： Tong Fang ,  Yunsang Kim ,  Andre D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32366 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/32136 ,  H01L21/6708

Abstract: A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.

Abstract translation: 在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体 斜角蚀刻机 在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。

公开(公告)号：US20130299089A1

公开(公告)日：2013-11-14

申请号：US13943653

申请日：2013-07-16

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Andrew BAILEY, III ,  Jack CHEN

IPC: H01L21/02

CPC classification number: H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

Abstract: An apparatus for etching a bevel edge of a substrate includes a bevel etch chamber and a controller including non-transitory computer readable media. The computer readable media includes computer readable code for providing a cleaning gas comprising at least one of a CO2 or CO, computer readable code for forming a cleaning plasma from the cleaning gas, and computer readable code for cleaning the bevel edge with the cleaning plasma, including computer readable code for placing the gas distribution plate at a close distance from a top surface of the substrate such that the cleaning plasma is not formed between the gas distribution plate and the substrate during the bevel edge cleaning, the bevel edge exposed to the cleaning plasma including at least an edge portion of a top surface at an edge of the substrate.

Abstract translation: 用于蚀刻衬底的斜边缘的设备包括斜面蚀刻室和包括非瞬态计算机可读介质的控制器。 计算机可读介质包括用于提供清洁气体的计算机可读代码，所述清洁气体包括CO 2或CO中的至少一种，用于从清洁气体形成清洁等离子体的计算机可读代码以及用清洁等离子体清洁斜面边缘的计算机可读代码， 包括用于将气体分配板放置在离基板顶表面较近距离处的计算机可读代码，使得在斜边清洁期间在气体分配板和基板之间不形成清洁等离子体，暴露于清洁的斜边 等离子体包括在衬底的边缘处的顶表面的至少边缘部分。

公开(公告)号：US08574397B2

公开(公告)日：2013-11-05

申请号：US13547700

申请日：2012-07-12

Applicant: Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

Inventor： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/02087 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01L21/67069

Abstract: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.

Abstract translation: 提供了一种用于清洁基板的斜边缘的等离子体处理室。 该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。 顶边电极通过顶部介质环电接地并与绝缘体板分离。 该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。 底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。 衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

公开(公告)号：US20130171831A1

公开(公告)日：2013-07-04

申请号：US13727671

申请日：2012-12-27

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu NAMBA ,  Fitrianto ,  Yoichi TOKUNAGA ,  Yoshifumi AMANO

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract translation: 基板处理装置包括：基板保持单元，被配置为保持基板; 第一处理液喷嘴，被配置为将第一处理液体供应到所述基板的周边部分; 第二处理液喷嘴，被配置为将温度低于第一处理液的第二处理液供给到基板的周边部分; 第一气体供给口，其构造成将第一温度的第一气体供给到所述基板的周边部的第一供气位置; 以及第二气体供给口，被配置为相对于与所述基板相对于所述第一气体供给位置，在比所述第一温度低的第二温度向所述径向中心附近供给第二气体。

公开(公告)号：US08475624B2

公开(公告)日：2013-07-02

申请号：US11697695

申请日：2007-04-06

Applicant: Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

Inventor： Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

IPC: C23F1/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC classification number: H01L21/02087 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32706 ,  Y10S134/902

Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.

Abstract translation: 提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。 该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。 顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。 该室包括通过处理室的顶表面限定的气体进料。 气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。 泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。 还提供了一种用于清洁基板的斜边缘的方法。