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公开(公告)号：US1684947A
公开(公告)日：1928-09-18
申请号：US64548323
申请日：1923-06-15
Applicant: C H F MULLER RONTGENROHRENFABR
Inventor： WILHELM DAUMANN
IPC: H01J19/28
CPC classification number: H01J19/28 , H01J2893/0013
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公开(公告)号：US1647994A
公开(公告)日：1927-11-08
申请号：US59724622
申请日：1922-10-27
Applicant: WESTERN ELECTRIC CO
Inventor： HOUSKEEPER WILLIAM G
IPC: H01J19/28
CPC classification number: H01J19/28 , H01J2893/0013
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公开(公告)号：US1639805A
公开(公告)日：1927-08-23
申请号：US35036220
申请日：1920-01-09
Applicant: GLENN L MARTIN
Inventor： MCCULLOUGH FREDERICK S
IPC: H01J19/28
CPC classification number: H01J19/28 , H01J2893/0011
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公开(公告)号：US1626858A
公开(公告)日：1927-05-03
申请号：US69568124
申请日：1924-02-28
Applicant: MAGNAVOX CO
Inventor： METCALF HERBERT E
CPC classification number: H01J21/02 , H01J19/28 , H01J2893/0012
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公开(公告)号：US1456528A
公开(公告)日：1923-05-29
申请号：US27757819
申请日：1919-02-17
Applicant: WESTERN ELECTRIC CO
Inventor： ARNOLD HAROLD D
IPC: H01J19/28
CPC classification number: H01J19/28 , H01J2893/0013
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Patent Agency Ranking
公开(公告)号：US1294694A
公开(公告)日：1919-02-18
申请号：US24870118
申请日：1918-08-07
Applicant: GEN ELECTRIC
Inventor： NOLTE HENRY J
CPC classification number: H01J19/28
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公开(公告)号：US1116960A
公开(公告)日：1914-11-10
申请号：US1912688687
申请日：1912-04-05
Applicant: GEN ELECTRIC
Inventor： WEINTRAUB EZECHIEL
CPC classification number: H01J19/28
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公开(公告)号：US09991082B2
公开(公告)日：2018-06-05
申请号：US15631113
申请日：2017-06-23
Inventor： Deyuan Xiao
Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
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公开(公告)号：US20170294284A1
公开(公告)日：2017-10-12
申请号：US15631113
申请日：2017-06-23
Inventor： Deyuan XIAO
Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
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公开(公告)号：US09715987B2
公开(公告)日：2017-07-25
申请号：US14558050
申请日：2014-12-02
Inventor： Deyuan Xiao
Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
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