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公开(公告)号：US07638260B2
公开(公告)日：2009-12-29
申请号：US11987333
申请日：2007-11-29
申请人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
发明人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有最小线边缘粗糙度的图案。
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102.发明申请Resist polymer, preparing method, resist composition and patterning process 审中-公开抗蚀聚合物，制备方法，抗蚀剂组成和图案化工艺公开(公告)号：US20070264592A1
公开(公告)日：2007-11-15
申请号：US11797683
申请日：2007-05-07
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译： 通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。 聚合物具有基本上不溶性组分的最小化含量。 使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。
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103.发明申请公开(公告)号：US20060160023A1
公开(公告)日：2006-07-20
申请号：US11373925
申请日：2006-03-13
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.
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公开(公告)号：US06946233B2
公开(公告)日：2005-09-20
申请号：US10200647
申请日：2002-07-22
申请人： Tsunehiro Nishi , Takeshi Kinsho
发明人： Tsunehiro Nishi , Takeshi Kinsho
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.
摘要翻译： 提供具有实际可用水平的显着高分辨率和耐蚀刻性的抗蚀剂材料，并且可用于精细微细加工; 使用抗蚀剂材料的图案化方法; 以及可用作抗蚀剂材料的基础树脂的聚合物。 更具体地说，提供了重均分子量为1,000〜500,000的聚合物，其包含一个或多个选自下述由式（1）至（3）表示的重复单元的重复单元; 和一个或多个下式（4）的重复单元; 和含有聚合物的抗蚀剂材料。
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公开(公告)号：US20050031988A1
公开(公告)日：2005-02-10
申请号：US10910308
申请日：2004-08-04
IPC分类号： C08F220/18 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R6 is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译： 包含式（1），（2）和（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3和R 4是H或OH，X是具有双环[2.2.1] 庚烷结构，由式（X-1）至（X-4）中的任一个表示：其中R 6是C 1 -C 10烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的线边缘粗糙度，并且借助于电子束或深紫外线用于VLSI制造的微图案化。
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公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译： 一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基 原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。 本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。
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107.发明授权Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译： 提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案 耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。 这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子 羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。
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108.发明授权Polymers chemically amplified positive resist compositions, and patterning method 失效聚合物化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US6027854A
公开(公告)日：2000-02-22
申请号：US31560
申请日：1998-02-27
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.
摘要翻译： 提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。 聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。 酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。 聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0
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