公开(公告)号：US11711979B2

公开(公告)日：2023-07-25

申请号：US18073275

申请日：2022-12-01

申请人： Tianma Japan, Ltd.

发明人： Nobuya Seko

IPC分类号： H10N10/817 ,  H10N10/01 ,  H10N10/17

CPC分类号： H10N10/817 ,  H10N10/01 ,  H10N10/17

摘要： A thermoelectric conversion element includes a substrate, a thermoelectric conversion layer disposed on a first main surface of the substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode disposed on the insulating layer and connecting to a first main surface of the thermoelectric conversion layer via a first contact hole of insulating layer, and a second electrode disposed on the insulating layer and connecting to the first main surface of the thermoelectric conversion layer via a second contact hole of the insulating layer. At least a portion of the first electrode is formed from a material that has a work function that is different from a work function of a material forming the second electrode.

公开(公告)号：US20230232718A1

公开(公告)日：2023-07-20

申请号：US18010678

申请日：2021-06-15

申请人： LG INNOTEK CO., LTD.

发明人： Sang Hoon BONG ,  Un Hak LEE

IPC分类号： H10N10/17

CPC分类号： H10N10/17

摘要： A thermoelectric module, according to an embodiment of the present invention, comprises: a substrate; a thermoelectric element arranged on the substrate to be spaced apart from each other; and a cover member arranged on the substrate and arranged on one side of the thermoelectric element, wherein the cover member includes a first side surface closest to one side of the thermoelectric element and a second side surface facing the first side surface, the first side surface includes a first groove concave toward the second side surface, the second side surface includes a second groove concave toward the first side surface, and the width of the first groove is greater than the width of the second groove.

公开(公告)号：US11696504B2

公开(公告)日：2023-07-04

申请号：US17321252

申请日：2021-05-14

申请人： STMICROELECTRONICS S.r.l.

发明人： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

IPC分类号： H10N10/855 ,  H10N10/01 ,  H10N10/17

CPC分类号： H10N10/855 ,  H10N10/01 ,  H10N10/17

摘要： A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：US11688999B2

公开(公告)日：2023-06-27

申请号：US17854240

申请日：2022-06-30

申请人： Hangzhou Dazn Electromechanical Technology Co., Ltd.

发明人： Feng Tang ,  Zebin Wu ,  Chao Yuan ,  Xingjie Dai

IPC分类号： A61L9/22 ,  H01T23/00 ,  H10N10/13 ,  H10N10/17

CPC分类号： H01T23/00 ,  A61L9/22 ,  H10N10/13 ,  H10N10/17

摘要： The invention provides a nano water ion group generator, including: at least a pair of P/N-type semiconductor dies including P-type semiconductor dies and N-type semiconductor dies, with one end being a cooling end and the other end being a heating end; a heat absorption member for obtaining a cold energy generated by the cooling end and transferring the cold energy to a blocking member; the blocking member for conducting the cold energy to obtain moisture in a condensed water or an air with high relative humidity; an ionizing member to absorb, collect or accumulate moisture in the condensed water or the air with high relative humidity, and be electrically coupled to the high voltage power supply for further ionizing the air and the moisture around the ionizing member under the action of avalanche effect to obtain at least one nanometer-sized substance among charged particles and oxygen-containing radicals.

公开(公告)号：US20230165148A1

公开(公告)日：2023-05-25

申请号：US17916318

申请日：2021-03-25

申请人： LG INNOTEK CO., LTD.

发明人： Tae Su YANG ,  Seung Hwan LEE

IPC分类号： H10N10/817 ,  H10N10/17

CPC分类号： H10N10/817 ,  H10N10/17

摘要： A thermoelectric element according to one embodiment of the present invention includes a first substrate, a first insulating layer disposed on the first substrate, first electrodes disposed on the first insulating layer, a plurality of semiconductor structures disposed on the first electrodes, and second electrodes disposed on the plurality of semiconductor structures, wherein an average value of absolute values of lengths from a center line to a profile curve of a rough surface of at least a part of an upper surface of the first insulating layer is in the range of 1 to 5 μm.

公开(公告)号：US20230165147A1

公开(公告)日：2023-05-25

申请号：US17916210

申请日：2021-03-25

申请人： LG INNOTEK CO., LTD.

发明人： Se Woon LEE ,  Jong Hyun KIM ,  Young Sam YOO

IPC分类号： H10N10/817 ,  H10N10/17

CPC分类号： H10N10/817 ,  H10N10/17

摘要： Provided according to an embodiment is a thermoelectric element comprising: a first insulating part; multiple first electrodes disposed on the first insulating part; a second electrode disposed above the first electrodes; a first conductive semiconductor structure and a second conductive semiconductor structure disposed while being spaced each other between the first electrodes and the second electrode; and a second insulating part disposed on the second electrode, wherein the first insulating part comprises first protrusions protruding toward the first electrodes, and the second insulating part comprises a second protrusion protruding toward the second electrode.

公开(公告)号：US20230145882A1

公开(公告)日：2023-05-11

申请号：US17917895

申请日：2021-01-21

申请人： TEGWAY CO.,LTD

发明人： Ockkyun OH

IPC分类号： H10N10/17

CPC分类号： H10N10/17

摘要： A thermoelectric device includes thermoelectric groups connected in series between first and second terminals provided in a plate shape deformable to a curved surface, having a first surface and an opposite second surface as a main surface, and configured to receive power from the outside. The thermoelectric groups include a first thermoelectric group configured to provide any one of a feeling of coldness and a feeling of warmth toward the first surface when the power is applied, an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface, and an electrode configured to alternately connect an N-type semiconductor and a P-type semiconductor and disposed adjacent to any one surface of the main surface. The thermoelectric filters also include a second thermoelectric group providing the other of the feeling of coldness and the feeling of warmth toward the first surface when the power is applied.

公开(公告)号：US11643737B2

公开(公告)日：2023-05-09

申请号：US17346325

申请日：2021-06-14

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS

发明人： Jung-Ho Lee ,  Jin-Young Jung ,  Dong-Hyung Kim ,  Sung-Hae Kim

IPC分类号： C25B9/50 ,  C25B1/04 ,  C25B9/65 ,  C25B11/053 ,  C25B11/091 ,  C25B11/059 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02 ,  H10N10/17

CPC分类号： C25B9/50 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45555 ,  C25B1/04 ,  C25B9/65 ,  C25B11/053 ,  C25B11/059 ,  C25B11/091 ,  H10N10/17

摘要： Provided is a photocathode structure including: a photocathode including silicon (Si); an intermediate layer formed on the photocathode, and including a silicon oxide (SiOx); and a protective layer foiled on the intermediate layer, and including a metal oxide, wherein the intermediate layer is a tunneling barrier configured to transfer charges from the photocathode to the protective layer by an electric field applied from an outside.

公开(公告)号：US20230124140A1

公开(公告)日：2023-04-20

申请号：US17913982

申请日：2021-03-02

申请人： LG INNOTEK CO., LTD.

发明人： Se Woon LEE ,  Jong Hyun KIM ,  Young Sam YOO

IPC分类号： H10N10/17

摘要： According to an embodiment, disclosed is a thermoelectric device comprising: a thermoelectric element comprising a first substrate, a plurality of first electrodes disposed on the first substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and a second substrate disposed on the plurality of second electrodes; and a heat sink comprising a plurality of fins disposed to be spaced apart on the second substrate, wherein the second substrate comprises a first region overlapping the second electrodes in a vertical direction and a second region not overlapping the second electrodes in the vertical direction, and wherein separation distances between adjacent fins of the plurality of fins are different from each other in the first region and the second region.

公开(公告)号：US20240357934A1

公开(公告)日：2024-10-24

申请号：US18686578

申请日：2023-01-10

申请人： SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES

发明人： Xun SHI ,  Ming GU ,  Pengfei QIU ,  Lidong CHEN

IPC分类号： H10N10/01 ,  H10N10/17

CPC分类号： H10N10/01 ,  H10N10/17

摘要： The present invention relates to a preparation method for a semiconductor material leg array and a batch preparation method for an interface layer of a semiconductor material leg array. The preparation method for a semiconductor material leg array comprises: placing a semiconductor block material on a surface of an extrusion mold, placing the semiconductor block material and the extrusion mold in a pressure-resistant sleeve, subjecting the semiconductor block material to plastic deformation by extrusion and filling holes that are arranged in an array on the surface of the extrusion mold, and demolding to obtain a semiconductor material leg array.