公开(公告)号：US1929699A

公开(公告)日：1933-10-10

申请号：US44649230

申请日：1930-04-23

Applicant: ALBERT LOPPACKER

Inventor： ALBERT LOPPACKER

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0013

公开(公告)号：US1794315A

公开(公告)日：1931-02-24

申请号：US74268424

申请日：1924-10-09

Applicant: GEN ELECTRIC

Inventor： MULLANEY DUDLEY A

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0012

公开(公告)号：US1721405A

公开(公告)日：1929-07-16

申请号：US4227425

申请日：1925-07-08

Applicant: GEN ELECTRIC

Inventor： MULLANEY DUDLEY A ,  HENDRY JOHNSON F

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0013

公开(公告)号：US1684947A

公开(公告)日：1928-09-18

申请号：US64548323

申请日：1923-06-15

Applicant: C H F MULLER RONTGENROHRENFABR

Inventor： WILHELM DAUMANN

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0013

公开(公告)号：US1647994A

公开(公告)日：1927-11-08

申请号：US59724622

申请日：1922-10-27

Applicant: WESTERN ELECTRIC CO

Inventor： HOUSKEEPER WILLIAM G

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0013

公开(公告)号：US1639805A

公开(公告)日：1927-08-23

申请号：US35036220

申请日：1920-01-09

Applicant: GLENN L MARTIN

Inventor： MCCULLOUGH FREDERICK S

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0011

公开(公告)号：US1626858A

公开(公告)日：1927-05-03

申请号：US69568124

申请日：1924-02-28

Applicant: MAGNAVOX CO

Inventor： METCALF HERBERT E

IPC: H01J19/28 ,  H01J21/02

CPC classification number: H01J21/02 ,  H01J19/28 ,  H01J2893/0012

公开(公告)号：US1456528A

公开(公告)日：1923-05-29

申请号：US27757819

申请日：1919-02-17

Applicant: WESTERN ELECTRIC CO

Inventor： ARNOLD HAROLD D

IPC: H01J19/28

CPC classification number: H01J19/28 ,  H01J2893/0013

公开(公告)号：US09991082B2

公开(公告)日：2018-06-05

申请号：US15631113

申请日：2017-06-23

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Deyuan Xiao

IPC: H01J21/06 ,  H01J19/28 ,  H01J19/38 ,  H01J9/24 ,  H01J9/14 ,  H01J9/385

CPC classification number: H01J21/06 ,  H01J9/148 ,  H01J9/24 ,  H01J9/385 ,  H01J19/28 ,  H01J19/38

Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

公开(公告)号：US20170294284A1

公开(公告)日：2017-10-12

申请号：US15631113

申请日：2017-06-23

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Deyuan XIAO

IPC: H01J21/06 ,  H01J19/28 ,  H01J19/38

CPC classification number: H01J21/06 ,  H01J9/148 ,  H01J9/24 ,  H01J9/385 ,  H01J19/28 ,  H01J19/38

Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hallow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.