公开(公告)号：US20050034999A1

公开(公告)日：2005-02-17

申请号：US10926202

申请日：2004-08-24

Applicant: Whonchee Lee ,  Scott Meikle ,  Scott Moore

Inventor： Whonchee Lee ,  Scott Meikle ,  Scott Moore

IPC: B23H3/00 ,  B23H5/08 ,  B24B1/00 ,  B24B7/19 ,  H01L21/8242 ,  H01L29/00

CPC classification number: B23H5/08 ,  B24B1/002

Abstract: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

Abstract translation: 一种用于从微电子衬底去除导电材料的方法和装置。 在一个实施例中，支撑构件相对于材料去除介质支撑微电子衬底，其可以包括第一和第二电极以及抛光垫。 一个或多个电解质设置在电极和微电子衬底之间以将电极电连接到微电子衬底。 然后将电极耦合到电流从基板电除去导电材料的变化的电流源。 微电子衬底和/或电极可以相对于彼此移动以相对于微电子衬底的选定部分定位电极，和/或抛光微电子衬底。 材料去除介质可以从微电子衬底和/或电极去除在该过程期间形成的气体。 介质还可以具有不同的第一和第二电特性，以提供与微电子衬底的不同区域的不同水平的电耦合。

公开(公告)号：US20050020191A1

公开(公告)日：2005-01-27

申请号：US10922027

申请日：2004-08-19

Applicant: Theodore Taylor

Inventor： Theodore Taylor

IPC: B24B37/04 ,  B24B49/00 ,  B24B1/00 ,  B24B7/19 ,  B24B51/00

CPC classification number: B24B37/105

Abstract: Planarizing machines and methods for accurately planarizing microelectronic workpieces. Several embodiments of the planarizing machines produce a planar surface at a desired endpoint in the microelectronic workpieces by (a) quickly reducing variances on the surface of the workpiece using a planarizing medium that removes topographical features but has a low polishing rate on planar surfaces; and (b) subsequently planarizing the wafer on a planarizing medium that has a higher polishing rate on planar surfaces than the first polishing medium.

Abstract translation: 用于精确平面化微电子工件的平面化机器和方法。 平面化机器的几个实施例通过以下方式在微电子工件中的期望端点处产生平坦表面：（a）使用平面化介质快速减小工件表面上的变化，所述平面化介质去除了平面表面上的抛光速率; 和（b）随后在平面化介质上平坦化晶片，所述平坦化介质在平坦表面上具有比第一抛光介质更高的抛光速率。

公开(公告)号：US06843707B2

公开(公告)日：2005-01-18

申请号：US10717096

申请日：2003-11-18

Applicant: Miguel Angel Saldana ,  Damon Vincent Williams

Inventor： Miguel Angel Saldana ,  Damon Vincent Williams

IPC: B24B37/04 ,  B24B37/16 ,  B24B37/32 ,  H01L21/304 ,  B24B7/19

CPC classification number: B24B37/32 ,  B24B37/16

Abstract: CMP methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface of a wafer carrier so that a wafer axis of rotation is gimballed for universal movement relative to a spindle axis of rotation of a wafer spindle. An operation using a retainer ring limits wafer movement on the carrier surface perpendicular to the wafer axis. Another operation limits a direction of permitted movement between the wafer carrier and the retainer ring to only movement parallel to the wafer axis, so that a wafer plane and a retainer ing may be co-planar.

Abstract translation: CMP方法减少了晶片的化学机械抛光边缘的边缘轮廓与边缘内的晶片的化学机械抛光中心部分的中心轮廓之间的差异的原因。 将晶片安装在晶片载体的载体表面上，使得晶片旋转轴线相对于晶片主轴的主轴旋转轴线进行万向移动。 使用保持环的操作限制了垂直于晶片轴线的载体表面上的晶片移动。 另一种操作限制晶片载体和保持环之间允许的移动方向仅仅平行于晶片轴线移动，使得晶片平面和保持器可以是共面的。

公开(公告)号：US5957759A

公开(公告)日：1999-09-28

申请号：US843870

申请日：1997-04-17

Applicant: Jon Cardenas ,  Alexander P. Plevich ,  Timothy C. Kinsey

Inventor： Jon Cardenas ,  Alexander P. Plevich ,  Timothy C. Kinsey

IPC: B01F3/12 ,  B01F13/10 ,  B24B37/04 ,  B24B57/02 ,  B24B7/19 ,  B24B7/30

CPC classification number: B01F13/1013 ,  B24B37/04 ,  B24B57/02 ,  B01F2003/1257 ,  B01F2013/1052 ,  B01F2215/0045

Abstract: A slurry distribution system for distributing slurry to a polishing machine that polishes a semiconductor wafer is disclosed. The slurry distribution system includes a storage tank for storing the slurry, a mixing device for mixing the slurry in the storage tank, a distribution loop with an inlet and outlet in fluid communication with the storage tank, a valve in fluid communication with the distribution loop for dispensing the slurry to the polishing machine, and a pump for circulating the slurry from the storage tank through the distribution loop and into the storage tank regardless of whether the slurry is dispensed to the polishing machine. In this manner, the slurry is agitated and efficiently used during polishing and during intervals between polishing.

Abstract translation: 公开了一种用于将浆料分散到研磨半导体晶片抛光机的浆料分配系统。 浆料分配系统包括用于储存浆料的储罐，用于将浆料混合在储罐中的混合装置，具有与储罐流体连通的入口和出口的分配回路，与分配回路流体连通的阀 用于将浆料分配到抛光机器，以及用于使浆料从储罐循环通过分配回路并进入储罐的泵，而不管浆料是否被分配到抛光机器。 以这种方式，在抛光期间和在抛光之间的间隔期间搅拌和有效地使用浆料。

公开(公告)号：US5846122A

公开(公告)日：1998-12-08

申请号：US429259

申请日：1995-04-25

Applicant: John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

Inventor： John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

IPC: B24B1/00 ,  B24B37/04 ,  B24B7/19 ,  B24B7/30

CPC classification number: B24B37/04 ,  B24B37/042

Abstract: Applicants have discovered a new method for fine polishing surfaces of metal-soluble materials such as diamond to the submicron level. The method involves applying to the material surface a polishing medium composed of metal powder and an acidic or basic carrier. The surface is then polished by high speed rubbing to a submicron finish. Several embodiments of apparatus for performing the polishing are described.

Abstract translation: 申请人已经发现了将金属可溶性材料如金刚石的表面精细抛光到亚微米级的新方法。 该方法包括向材料表面施加由金属粉末和酸性或碱性载体构成的抛光介质。 然后通过高速摩擦将表面抛光到亚微米的表面。 描述了用于执行抛光的装置的几个实施例。

公开(公告)号：US5766060A

公开(公告)日：1998-06-16

申请号：US752758

申请日：1996-11-20

Applicant: Randall Charles Foreman ,  Nadir Freedman

Inventor： Randall Charles Foreman ,  Nadir Freedman

IPC: B24B7/19 ,  B24B7/16 ,  B24B19/02 ,  B24D13/10 ,  B24D13/14 ,  F16D65/00 ,  F16D65/12 ,  F16D69/00

CPC classification number: F16D65/0006 ,  B24B19/028 ,  B24B7/16 ,  B24D13/10 ,  B24D13/145 ,  F16D65/127 ,  F16D2069/004 ,  F16D2250/003

Abstract: A spiral pattern abrading tool applies a cross hatch pattern to a flat surface in a single pass rather than two passes as has been used in the past. The abrading tool comprising an abrading holder having a plurality of abrasion members flexibly mounted from pre-determined points on the holder. The points being arranged in a pattern with a series of arcs extending out from the center of the holder, the points spaced apart at pre-determined distances along the arcs such that rotation of the holder in either direction provides a spiral pattern of abrasion members. To apply the cross hatch pattern, the flat surface is rotated and the abrading tool rotated so that a spiral pattern is applied to the flat surface.

Abstract translation: 螺旋图案研磨工具在一次通过中将交叉阴影图案应用于平坦表面，而不是像过去已经使用的两遍。 研磨工具包括具有从保持器上的预定点灵活地安装的多个磨损构件的研磨保持器。 这些点被布置成具有从保持器的中心延伸出的一系列弧的图案，所述点沿着弧线以预定的距离间隔开，使得保持器沿任一方向的旋转提供磨损构件的螺旋图案。 为了施加交叉影线图案，平面被旋转并且研磨工具旋转，使得螺旋图案被施加到平坦表面。

公开(公告)号：US5702290A

公开(公告)日：1997-12-30

申请号：US631289

申请日：1996-04-08

Applicant: Michael A. Leach

Inventor： Michael A. Leach

IPC: B24B37/11 ,  B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC classification number: B24B37/11

Abstract: A number of blocks are reciprocably supported in a polishing apparatus in accordance with this invention, entirely independent of each other so that lifting motion of one block is not transferred to an adjacent block, thus providing flexibility to follow the global curvature of the wafer. The polishing apparatus uses a block of a very hard design to ensure minimal deflection of the block into the microstructure of the wafer. Each block removes a portion of the wafer using relative motion between the block and the wafer. Each block is supported by at least three regions of the wafer during the relative motion, wherein each of the regions has the slowest rate of material removal in a die enclosing that region. In one embodiment, the smallest dimension of a block is approximately three times the size of the side of a die. The three point support and hard design of the blocks ensure local polishing removal uniformity while the independent support of the blocks ensures global uniformity, thus achieving an advantage over the conventional polishing process and apparatus.

Abstract translation: 根据本发明的抛光装置中，多个块可往复地支撑，完全独立于一个块，使得一个块的提升运动不会传递到相邻的块，从而提供跟随晶片的全局曲率的灵活性。 抛光装置使用非常硬的设计的块来确保块到晶片的微结构中的最小偏转。 每个块使用块和晶片之间的相对运动来移除晶片的一部分。 每个块在相对运动期间由晶片的至少三个区域支撑，其中每个区域在包围该区域的模具中具有最慢的材料去除速率。 在一个实施例中，块的最小尺寸大约是管芯侧面尺寸的三倍。 块的三点支撑和硬设计确保了局部抛光去除均匀性，而块的独立支撑确保了全局均匀性，从而比传统的抛光工艺和设备获得了优势。

公开(公告)号：US5681208A

公开(公告)日：1997-10-28

申请号：US596102

申请日：1996-02-12

Applicant: Erwin Junker

Inventor： Erwin Junker

IPC: B23B31/177 ,  B23B31/02 ,  B23B31/18 ,  B23B31/22 ,  B23B31/40 ,  B23Q3/00 ,  B24B5/42 ,  B24B41/06 ,  B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC classification number: B23Q3/00 ,  B23B31/22 ,  B23B31/4066 ,  B24B41/062 ,  B24B5/421

Abstract: An apparatus for grinding particularly a crankshaft is proposed, the apparatus having a workpiece headstock and a tailstock with, in each case, a bearing, which is disposed in the extension of the crankshaft axis and is intended to accommodate the crankshaft at its axial end points. Moreover, the workpiece headstock and the tailstock each have a spike, in which the crankshaft is mounted and fixed free of axial pressure.

Abstract translation: PCT No.PCT / EP94 / 02729 Sec。 371日期：1996年2月12日 102（e）日期1996年2月12日PCT 1994年8月16日PCT PCT。 公开号WO95 / 05265 日期1995年2月23日提出了一种用于特别研磨曲轴的研磨设备，该设备具有工件主轴箱和尾座，每个轴承都设置在曲轴轴线的延伸部中，并且用于容纳曲轴 在其轴向端点。 此外，工件主轴箱和尾架各自具有尖峰，其中曲轴被安装和固定而没有轴向压力。

公开(公告)号：US5632668A

公开(公告)日：1997-05-27

申请号：US695511

申请日：1996-08-12

Applicant: Gene O. Lindholm ,  Robert A. Follensbee

Inventor： Gene O. Lindholm ,  Robert A. Follensbee

IPC: B24B13/01 ,  B24D3/28 ,  B24D3/34 ,  B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC classification number: B24B13/01 ,  B24D3/28 ,  B24D3/342

Abstract: A method for polishing an optical quality surface, such an ophthalmic lens, to finish which can accept a hardenable protective coating without using an abrasive slurry or gel, including the steps of: (a) providing an optical lens having a first major surface, the first major surface having an initial Rtm value of greater than 0.35 micrometers; (b) bringing the first major surface into a frictional contacting relationship with an abrasive article, wherein the abrasive article includes a sheet-like structure having deployed on at least one major surface thereof a plurality of individual abrasive composites, each composite having a plurality of abrasive particles dispersed in a binder; and (c) moving at least one of the contacting first major surface and abrasive article relative to each other with rotational and/or oscillatory movement in the presence of a liquid substantially free of abrasive particles in a manner and for a time effective to polish the first major surface to provide a final Rtm value in the first major surface of 0.30 micrometers or less.

Abstract translation: 一种用于抛光光学质量表面的方法，例如眼镜片，其可以接受可硬化的保护涂层而不使用磨料浆料或凝胶，包括以下步骤：（a）提供具有第一主表面的光学透镜， 初始Rtm值大于0.35微米的第一主表面; （b）使所述第一主表面与磨料制品形成摩擦接触关系，其中所述磨料制品包括片状结构，其在其至少一个主表面上具有多个单独的研磨复合材料，每个复合材料具有多个 研磨颗粒分散在粘合剂中; 和（c）在存在基本上不含磨料颗粒的液体的情况下，通过旋转和/或振荡运动相对于彼此移动至少一个接触的第一主表面和磨料制品，并以有效抛光 第一主表面在0.30微米或更小的第一主表面提供最终的Rtm值。

公开(公告)号：US20230144445A1

公开(公告)日：2023-05-11

申请号：US18092347

申请日：2023-01-02

Applicant: Hymmen GmbH Maschinen- und Anlagenbau

Inventor： René PANKOKE

IPC: B05D1/02 ,  B05B1/02 ,  B05D3/00 ,  B24B7/19 ,  B24B21/04 ,  B24B53/00 ,  B41M5/00 ,  B44C3/00 ,  B29C59/02 ,  B29C59/16

CPC classification number: B05D1/02 ,  B05B1/02 ,  B05D3/007 ,  B24B7/19 ,  B24B21/04 ,  B24B53/003 ,  B29C59/02 ,  B29C59/16 ,  B41M5/0041 ,  B44C3/005 ,  B24B29/005

Abstract: A method for manufacturing a structure on a surface of a workpiece (1) is disclosed, the method having the following steps:

applying a liquid base layer (2) onto the surface of the workpiece (1);
spraying on at least one droplet (3) into the not yet congealed base layer (2), wherein the at least one droplet (3) at least partially, preferably completely, penetrates into the base layer (2);
fixing the base layer (2); and
at least partially removing the at least one droplet (3).


Further, a second method having the following steps is disclosed:

spraying on at least one droplet (3) onto the surface of the workpiece (1);
applying a liquid base layer (2) onto the surface of the workpiece (1), wherein the base layer (2) flows around the at least one droplet (3) and preferably at least partially covers the at least one droplet (3);
fixing the base layer (2);
at least partially removing the at least one droplet (3).


Finally, a device for performing the methods is disclosed.