公开(公告)号：US20210200104A1

公开(公告)日：2021-07-01

申请号：US16647092

申请日：2020-02-14

Applicant: KLA CORPORATION

Inventor： Daria Negri ,  Amnon Manassen ,  Gilad Laredo

IPC: G03F7/20

Abstract: A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.