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公开(公告)号:US20130153378A1
公开(公告)日:2013-06-20
申请号:US13768235
申请日:2013-02-15
CPC分类号: H01H59/00 , B81B2201/014 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/00182 , B81C2201/0107 , G06F17/5068
摘要: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.
摘要翻译: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一配线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔,使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。