Abstract:
Disclosed are a multi-functional resin composite material including (A) a thermoplastic resin, (B) a nickel-coated carbon fiber, (C) a carbon nanotube, and (D) an inorganic material having a volume resistance of about 10−3 Ω·m or less and a relative permeability of about 5000 or more, and a molded product fabricated using the same.
Abstract:
A process for forming a copper wiring and the prevention of copper ion migration in a semiconductor device is disclosed herein. The process includes conducting a post-cleaning process for a copper layer that is to form the cooper wiring after already having undergone a CMP process. The post-cleaning process includes conducting a primary chemical cleaning using a citric acid-based chemical. A secondary chemical cleaning is then conducted on the copper layer having undergone the primary chemical cleaning using an ascorbic acid-based chemical. After the post-cleaning process is completed, the migration of copper ions over time is prevented thereby improving the reliability of the semiconductor device.
Abstract:
A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.
Abstract:
A thermally conductive polymer composite that can have excellent thermal conductivity with a low content of a metal filler and capable of reinforcing mechanical strength by effectively compositing a thermally conductive filler is provided. The polymer composite includes 30 to 85% by volume of a crystalline polymer resin, 5 to 69% by volume of mixed metal fillers, and 1 to 10% by volume of a low-melting-point metal.
Abstract:
A digital image processing apparatus may display an image that can be converted into other images by using a rapid sliding method. The digital image processing apparatus may include a storage medium in which a first image file and a second image file are stored and a buffer in which information about a first synthesized image, including a first image corresponding to the first image file and a second image corresponding to the second image file disposed adjacent to each other, is stored. The digital image processing apparatus may further include a display unit that displays at least one of the first image, a first partial synthesized image, and the second image by using a piece of the information about the first synthesized image. The first partial synthesized image may include a portion of the first image and a portion of the second image disposed adjacent to each other.
Abstract:
A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.
Abstract:
An optical attenuator using an isolator, and an optical communications system including the same, function to control the intensity of an input optical signal. The isolator comprises a Faraday rotator in which a rotation angle of polarization varies depending on the intensity of an applied magnetic field. As a result, the level of isolation of an optical signal changes in accordance with the rotation angle of polarization and an attenuated optical signal is outputted. A magnetic field generator generates a magnetic field having an intensity which is controlled by the intensity of current, and the generated magnetic field is applied to the isolator A power supply supplies current to the magnetic field generator and controls the intensity of the current. A magnetic core and a coil are installed on the optical isolator, and currents applied to the coil are controlled to adjust the intensity of the magnetic field which is formed on the isolator. Accordingly isolation of an optical signal is controlled, and the optical signal is attenuated. The optical attenuator is easily mounted on the system because of its small size, and can change the level of attenuation by controlling only the intensity of current.
Abstract:
A method and apparatus for amplifying the optical signals of a C-band (1550 nm wavelength band) and a L-band (1580 nm wavelength band) in a wide-band optical fiber amplifier, wherein the incoming optical signals are separated into the 1550 nm wavelength band and the 1580 nm wavelength band by a WVDM optical coupler and respectively amplified by a C-band EDFA and a L-band EDFA A backward ASE generated by the C-band EDFA is fed back to the L-band EDFA by a circulator as a supplementary pumping light to the amplification of the optical signals of the 1580 nm wavelength band.
Abstract:
A L-band(long-band) optical fiber amplifier is provided. The L-band optical fiber amplifier includes an optical fiber doped with a rare-earth element, at least one pumping light source for emitting pumping light to the optical fiber, a seed beam source for emitting a seed beam at a predetermined wavelength band, and a seed beam coupler disposed between an input terminal and the optical fiber, for coupling an input optical signal with the seed beam and feeding the coupled light forward to the optical fiber. By use of the seed beam, the L-band optical fiber amplifier improves gain flatness characteristics at wavelengths of an optical signal and increases amplification efficiency when the length of the optical fiber and the intensities of the optical signal and the pumping light are changed.
Abstract:
An optical fiber amplifier including a first optical fiber doped with erbium and phosphorous, for amplifying signal light excited by the erbium, a second optical fiber connected to one end of the first optical fiber, doped with erbium and aluminum, and having a gain spectrum slope opposite to the first optical fiber according to population inversion of the erbium, for amplifying signal light output by the first optical fiber, a pumping laser source connected to another end of the first optical fiber, for exciting the erbium of the first and second optical fibers, and a light coupler for coupling pumping light from the pumping laser source to the signal light and outputting the resultant light to the first optical fiber. Two types of EDFs (erbium doped fibers) having different gain spectrums are used, such that the gain spectrum of each of the EDFs actively varies with the input signal light power or pumping light power. Thus, an entirely flat gain is kept.