Memory device including transistor array with shared plate channel and method for making the same
    91.
    发明授权
    Memory device including transistor array with shared plate channel and method for making the same 有权
    存储器件包括具有共享板通道的晶体管阵列及其制造方法

    公开(公告)号:US08704206B2

    公开(公告)日:2014-04-22

    申请号:US13356633

    申请日:2012-01-23

    摘要: The present invention relates to memory devices incorporating therein a novel memory cell architecture which includes an array of selection transistors sharing a common channel and method for making the same. A memory device comprises a semiconductor substrate having a first type conductivity, a plurality of drain regions and a common source region separated by a common plate channel in the substrate, and a selection gate disposed on top of the plate channel with a gate dielectric layer interposed therebetween. The plurality of drain regions and the common source region have a second type conductivity opposite to the first type provided in the substrate.

    摘要翻译: 本发明涉及其中结合有新颖的存储单元架构的存储器件,其包括共享公共通道的选择晶体管阵列及其制造方法。 存储器件包括具有第一类型导电性的半导体衬底,多个漏极区域和由衬底中的公共板沟道分开的公共源极区域,以及选择栅极,其设置在板沟道的顶部,栅极介电层插入 之间。 多个漏极区域和公共源极区域具有与设置在衬底中的第一类型相反的第二类型导电性。

    Magnetic write heads with bi-layer wrap around shields having dissimilar shield layer widths
    93.
    发明授权
    Magnetic write heads with bi-layer wrap around shields having dissimilar shield layer widths 有权
    具有双层缠绕屏蔽的磁性写头具有不同的屏蔽层宽度

    公开(公告)号:US08619391B2

    公开(公告)日:2013-12-31

    申请号:US12914543

    申请日:2010-10-28

    IPC分类号: G11B5/31

    CPC分类号: G11B5/3116 G11B5/3163

    摘要: Magnetic write heads and corresponding fabrication methods for bi-layer wrap around shields resulting in dissimilar shield layer widths are disclosed. A gap structure is formed around a main write pole for a magnetic write head. A wrap around shield for the main write pole is fabricated to include a first magnetic layer proximate to the main write pole and a second magnetic layer on the first magnetic layer. A width of the first magnetic layer is less than the width of the second magnetic layer, and back edges of the first and second magnetic layers are coplanar. Further, a throat height of the wrap around shield is maintained between the first and the second magnetic layers because their back edges are coplanar.

    摘要翻译: 公开了用于双层缠绕屏蔽的磁性写头和相应的制造方法,导致不同的屏蔽层宽度。 在用于磁写头的主写磁极周围形成间隙结构。 制造用于主写极的环绕屏蔽件,以包括靠近主写磁极的第一磁性层和第一磁性层上的第二磁性层。 第一磁性层的宽度小于第二磁性层的宽度,第一和第二磁性层的后边缘是共面的。 此外,由于它们的后边缘是共面的,缠绕屏蔽的喉部高度保持在第一和第二磁性层之间。

    Rendering for improved diagnostic image consistency
    94.
    发明授权
    Rendering for improved diagnostic image consistency 有权
    渲染以提高诊断图像的一致性

    公开(公告)号:US08588485B2

    公开(公告)日:2013-11-19

    申请号:US12482651

    申请日:2009-06-11

    IPC分类号: G06K9/00

    CPC分类号: G06F19/321 G06F19/00

    摘要: A networked system for rendering diagnostic image data for display has at least one diagnostic imaging apparatus that obtains digital image data for a patient and is in communication with a computer network. At least one consistency control module executes at a networked processor and is operatively responsive to a set of programmed instructions for accessing and detecting the type of image, for identifying one or more control points in the obtained digital image data, for mapping the input code values of the one or more control points to corresponding predetermined code values, for mapping additional input code values to output values according to the mapping of the one or more control points, and for providing rendered image data as output. A DICOM destination in networked communication with the at least one consistency control module stores or displays the rendered image data.

    摘要翻译: 用于呈现用于显示的诊断图像数据的网络系统具有获得患者的数字图像数据并与计算机网络通信的至少一个诊断成像装置。 至少一个一致性控制模块在网络处理器处执行,并且可操作地响应于一组编程指令,用于访问和检测图像的类型,用于识别所获得的数字图像数据中的一个或多个控制点,用于映射输入代码值 将所述一个或多个控制点的所述一个或多个控制点转换成相应的预定代码值,用于根据所述一个或多个控制点的映射将附加输入代码值映射到输出值,并且用于将渲染图像数据提供为输出。 与所述至少一个一致性控制模块联网通信的DICOM目的地存储或显示所渲染的图像数据。

    Magnetic random access memory with field compensating layer and multi-level cell
    95.
    发明授权
    Magnetic random access memory with field compensating layer and multi-level cell 有权
    具有场补偿层和多级单元的磁随机存取存储器

    公开(公告)号:US08565010B2

    公开(公告)日:2013-10-22

    申请号:US13099321

    申请日:2011-05-02

    IPC分类号: G11C11/15

    摘要: A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

    摘要翻译: 自旋转矩磁性随机存取存储器(STTMRAM)元件包括形成在基板上的参考层,具有固定的垂直磁性分量。 接合层形成在参考层的顶部,并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部,固定层形成在间隔层的顶部,固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消,自由层具有面内边缘磁化场。

    Fastener and heat dissipation device using the same
    99.
    发明授权
    Fastener and heat dissipation device using the same 失效
    紧固件和散热装置使用相同

    公开(公告)号:US08511956B2

    公开(公告)日:2013-08-20

    申请号:US12688796

    申请日:2010-01-15

    申请人: Jian Liu Jing Zhang

    发明人: Jian Liu Jing Zhang

    IPC分类号: F16B39/00

    摘要: An exemplary fastener used for connecting at least two components together includes a bolt, a shell, and an elastic member. The bolt has a head, a shaft, an engaging portion, and a threaded portion in series. A diameter of the engaging portion is larger than a diameter of the shaft and a diameter of the threaded portion. The shell has a side wall and a collar extending inwardly from a bottom of the side wall. The collar defines a through hole therein. A diameter of the through hole is slightly smaller than the diameter of the engaging portion of the bolt. The elastic member is sandwiched between the head of the bolt and the collar of the shell. The bolt with the elastic member is received in the shell, and a top of the engaging portion of the bolt abuts against a bottom of the collar of the shell.

    摘要翻译: 用于将至少两个部件连接在一起的示例性紧固件包括螺栓,壳体和弹性部件。 螺栓具有头部,轴,接合部分和串联的螺纹部分。 接合部的直径大于轴的直径和螺纹部的直径。 壳体具有从侧壁的底部向内延伸的侧壁和套环。 套环在其中形成一个通孔。 通孔的直径略小于螺栓的接合部的直径。 弹性构件被夹在螺栓的头部和壳的套环之间。 具有弹性构件的螺栓容纳在壳体中,并且螺栓的接合部分的顶部抵靠壳体的轴环的底部。

    Magnetic random access memory with switching assist layer
    100.
    发明授权
    Magnetic random access memory with switching assist layer 有权
    具有开关辅助层的磁性随机存取存储器

    公开(公告)号:US08492860B2

    公开(公告)日:2013-07-23

    申请号:US13289372

    申请日:2011-11-04

    IPC分类号: H01L29/82

    摘要: A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

    摘要翻译: STTMRAM元件包括由非磁性分离层(NMSL)隔开的由第一自由层和第二自由层制成的磁化层,第一和第二自由层各自具有彼此作用的面内磁化 反平行耦合。 在向STTMRAM元件施加电流之前,第一自由层和第二自由层的磁化方向各自在同一平面内,此后,第二自由层的磁化方向基本上标称为平面外,并且 第一自由层开关的磁化方向。 当电流停止到STTMRAM元件时,第二自由层的磁化方向保持在与第一自由层基本相反的方向上。