公开(公告)号：US06413310B1

公开(公告)日：2002-07-02

申请号：US09529869

申请日：2000-04-20

申请人： Masaro Tamatsuka ,  Norihiro Kobayashi ,  Shoji Akiyama ,  Masaru Shinomiya

发明人： Masaro Tamatsuka ,  Norihiro Kobayashi ,  Shoji Akiyama ,  Masaru Shinomiya

IPC分类号： C21D100

CPC分类号： C30B29/06 ,  C30B33/02 ,  H01L21/3225 ,  Y10S117/906 ,  Y10T428/12674

摘要： Silicon single crystal wafers for semiconductor devices of high quality are obtained with high productivity by effectively reducing or eliminating grown-in defects in surface layers of silicon single crystal wafers produced by the CZ method. The present invention provides a method for producing a silicon single crystal wafer, which comprises growing a silicon single crystal ingot by the Czochralski method, slicing the single crystal ingot into a wafer, subjecting the wafer to a heat treatment at a temperature of 1100-1300° C. for 1 minute or more under a non-oxidative atmosphere, and successively subjecting the wafer to a heat treatment at a temperature of 700-1300° C. for 1 minute or more under an oxidative atmosphere without cooling the wafer to a temperature lower than 700° C. The present invention also provides a CZ silicon single crystal wafer, wherein density of COPs having a size of 0.09 &mgr;m or more in a surface layer having a thickness of up to 5 &mgr;m from a surface is 1.3 COPs/cm2 or less, and density of COPs having a size of 0.09 &mgr;m or more in a bulk portion other than the surface layer is larger than the density of COPs of the surface layer.

摘要翻译： 通过有效地减少或消除由CZ方法生产的硅单晶晶片的表面层中的生长缺陷，以高生产率获得高质量的半导体器件的硅单晶晶片。 本发明提供了一种硅单晶晶片的制造方法，其包括通过切克劳斯基法（Czochralski method）生长硅单晶锭，将单晶锭切割成晶片，使晶片在1100-1300℃的温度下进行热处理 在非氧化性气氛下保持1分钟以上，并且在氧化气氛下依次使晶片在700-1300℃的温度下进行1分钟以上的热处理，而不将晶片冷却至温度 本发明还提供了一种CZ硅单晶晶片，其中表面层中具有0.09μm或更大的厚度的COP的密度从表面至多为5μm的浓度为1.3个COPs / cm 2 在表面层以外的本体部分中，具有0.09μm以上的尺寸的COP的密度大于表层的COP的密度。

公开(公告)号：US06645322B2

公开(公告)日：2003-11-11

申请号：US09866263

申请日：2001-05-25

申请人： Chin-Han Wang

发明人： Chin-Han Wang

IPC分类号： C21D100

CPC分类号： E06B9/386 ,  Y10T428/31678

摘要： A method is provided for making carbon-steel blind slats and products thereof by slitting the carbon-steel sheet into pieces of desired width, trimming the edges, quenching, speedy cooling, tempering, and painting and baking. The blind product made by this method is merited in resilience, lifetime, easy maintenance, heat-resistance, fad-resistance, and is retrievable and reusable to conform to the environment protection conditions.

公开(公告)号：US06287399B1

公开(公告)日：2001-09-11

申请号：US09181214

申请日：1998-10-27

申请人： Yuta Urushiyama

发明人： Yuta Urushiyama

IPC分类号： C21D100

CPC分类号： C22F1/006 ,  C21D7/02 ,  C21D2201/00 ,  C21D2201/01 ,  C21D2221/00 ,  C21D2281/00 ,  Y10S148/902

摘要： Disclosed is an elongated metallic article having a curved section therein which has a first part formed on an outside part of the curved section, and a second part formed on an inside part of the curved section. The first part was initially deformed beyond a region of twin boundary deformation, but was thereafter returned to the region of twin boundary deformation. The second part was left deformed beyond the region of twin boundary deformation. When a compressive load is applied to the thus prepared article, and the first part and the second part are both compressed, the first part can deform more readily than the second part so that the article deforms into a more straight shape as its deformation progresses. Thus, the article may be made resistant to buckling in spite of the presence of the curved section.

摘要翻译： 公开了一种细长金属制品，其具有弯曲部分，其中具有形成在弯曲部分的外侧部分上的第一部分，以及形成在弯曲部分的内侧部分上的第二部分。 第一部分最初变形超过双边界变形区域，然后返回到双边界变形区域。 第二部分变形超出双边界变形区域。 当对这样制备的制品施加压缩载荷，并且第一部分和第二部分都被压缩时，第一部分可以比第二部分更容易变形，使得制品在其变形进行时变形为更直的形状。 因此，即使存在弯曲部分，制品也可以抗屈曲。

公开(公告)号：US06818080B2

公开(公告)日：2004-11-16

申请号：US10000480

申请日：2001-12-04

申请人： Kazuo Sakamoto ,  Yasuo Uosaki ,  Nobuo Sakate

发明人： Kazuo Sakamoto ,  Yasuo Uosaki ,  Nobuo Sakate

IPC分类号： C21D100

CPC分类号： C22F1/06 ,  B22D17/007 ,  C22C1/005 ,  C22F1/04

摘要： A manufacturing method for a shaped light metal article includes the steps of forming a plastic worked article by plastic working an article for plastic working made of light metal material, and subjecting the plastic worked article to a post-plastic working heat treatment for between 20 minutes and 10 hours at a temperature in a range of 250 to 400° C. As a result, a shaped light metal article is produced with sufficient ductility.

摘要翻译： 成形轻金属制品的制造方法包括以下步骤：通过塑料加工塑料加工制品，用于由轻金属材料制成的塑料制品制品，并对塑料加工制品进行后塑性加工热处理20分钟 在250〜400℃的温度下进行10小时。结果，制造具有充分延展性的成形的轻金属制品。

公开(公告)号：US06761779B2

公开(公告)日：2004-07-13

申请号：US09796355

申请日：2001-03-02

申请人： Didier Delaunay ,  Alain Morel

发明人： Didier Delaunay ,  Alain Morel

IPC分类号： C21D100

CPC分类号： C21D1/52 ,  C21D9/56 ,  C21D11/00

摘要： A method is disclosed for preheating a metal strip in at least one direct fired preheating section of a furnace for limiting the oxidation of the metal strip. The method includes installing burners in the preheating section along its length for establishing a plurality of preheating sub-zones of unit length corresponding to one burner. The air and fuel settings for each burner are adjusted in accordance with a desired heat demand. Subsequent steps include operating a variable number of downstream burners at full power to establish a preheating zone of variable length to produce the desired heat demand, and extinguishing a second variable number of upstream burners to establish a corresponding variable recovery zone.

摘要翻译： 公开了一种用于在炉的至少一个直接燃烧预热部分中预热金属带以限制金属带的氧化的方法。 该方法包括沿预热部分沿其长度安装燃烧器，以建立与一个燃烧器对应的单元长度的多个预热子区域。 每个燃烧器的空气和燃料设置根据期望的热量需求进行调节。 随后的步骤包括以全功率操作可变数量的下游燃烧器以建立可变长度的预热区域以产生期望的热需求，以及熄灭第二可变数量的上游燃烧器以建立相应的可变恢复区域。

公开(公告)号：US06689228B2

公开(公告)日：2004-02-10

申请号：US09998159

申请日：2001-12-03

申请人： Norbert Köck ,  Rainer Wahn

发明人： Norbert Köck ,  Rainer Wahn

IPC分类号： C21D100

CPC分类号： B21B39/004 ,  B21B1/085 ,  B21B39/14 ,  B21B43/003 ,  B21B45/023 ,  C21D1/63 ,  C21D9/0018 ,  C21D9/04 ,  C21D9/06 ,  C21D2221/02

摘要： A device and a process for tempering at least parts of the cross section of sequentially produced profiled rolling stock from the rolling heat and for the subsequent cooling thereof to room temperature. The device comprises a hardening device comprising at least to liquid cooling devices arranged next to each other and a transport device having rests for the rolling stock that can be moved across the entire hardening device. Thereby the liquid cooling devices can simultaneously and independently be supplied with rolling stock to be hardened.

摘要翻译： 一种装置和方法，用于从轧制热中回火顺序生产的成型车辆的横截面的至少一部分，并随后将其冷却至室温。 该装置包括硬化装置，该硬化装置至少包括彼此相邻布置的液体冷却装置，以及具有用于能够跨过整个硬化装置移动的机车车辆的运输装置。 因此，液体冷却装置可以同时且独立地供给要硬化的车辆。

公开(公告)号：US06582535B1

公开(公告)日：2003-06-24

申请号：US09980932

申请日：2001-12-05

申请人： Satoru Suzuki ,  Hirohito Miyashita

发明人： Satoru Suzuki ,  Hirohito Miyashita

IPC分类号： C21D100

CPC分类号： B22F1/0011 ,  B22F2998/10 ,  C22C1/045 ,  C23C14/3414 ,  B22F3/14 ,  B22F3/15

摘要： A tungsten powder having a powder specific surface of 0.4 m2/g or more is hot-pressed at a temperature of 1,600° C. or more and then subjected to HIP at a temperature of 1,700° C. or more without capsuling, whereby a tungsten target for sputtering is manufactured that has a relative density of 99% or more and an average crystal grain size of 100 &mgr;m or less. This manufacturing method can manufacture, stably at a low cost, a tungsten target having such a high density and fine crystal structure as cannot be attained by the conventional pressure sintering method, and can greatly decrease the number of particle defects on a film produced by using such a target.

摘要翻译： 将粉末比表面积为0.4m 2 / g以上的钨粉末在1600℃以上的温度下进行热压，然后在1700℃以上的温度下进行HIP，而不进行包覆，由此钨 制造相对密度为99％以上，平均结晶粒径为100μm以下的溅射靶。 该制造方法可以以低成本稳定地制造具有如以往的加压烧结法无法达到的高密度，微细晶体结构的钨靶，能够大幅度减少使用中产生的膜产生的粒子缺陷数 这样的目标。

公开(公告)号：US06471795B2

公开(公告)日：2002-10-29

申请号：US09789675

申请日：2001-02-22

申请人： Kazuya Kubo ,  Toshiki Kabutomori ,  Hideaki Itoh

发明人： Kazuya Kubo ,  Toshiki Kabutomori ,  Hideaki Itoh

IPC分类号： C21D100

CPC分类号： H01M4/383 ,  C22C22/00

摘要： A hydrogen storage alloy of TiaMnbVcZrd (one of two kinds or more of Fe, Co, Cu, Zn, Ca, Al, Mo and Ni)x (herein, a is 10 to 40 atomic %, b is 40 to 60 atomic %, c is 5 to 30 atomic %, d is 15 atomic % or less, and x is 0 to 10 atomic %) is obtained by the rapid solidification (solidification at the cooling rate of desirably 103° C./sec or higher).

摘要翻译： TiaMnbVcZrd的储氢合金（Fe，Co，Cu，Zn，Ca，Al，Mo和Ni两种以上之一）x（本文中，a为10〜40原子％，b为40〜60原子％ c为5〜30原子％，d为15原子％以下，x为0〜10原子％）通过快速凝固（冷却速度优选为103℃/秒以上进行固化）得到。

公开(公告)号：US06315838B1

公开(公告)日：2001-11-13

申请号：US09525614

申请日：2000-03-14

申请人： David C. Dunand ,  Christopher Schuh

发明人： David C. Dunand ,  Christopher Schuh

IPC分类号： C21D100

CPC分类号： C22C1/1094 ,  C21D1/00 ,  C21D1/785 ,  C21D2201/00 ,  C22F1/00 ,  C22F1/04

摘要： A method for creep cavity shrinkage and/or porosity reduction without applied stress. The thermal treatment is found to increase the rate of densification relative to isothermal annealing, allowing for more rapid recovery of desired theoretical density in a shorter time.

摘要翻译： 一种不施加应力的蠕变腔收缩和/或孔隙率降低的方法。 发现热处理增加了相对于等温退火的致密化速率，允许在更短的时间内更快速地恢复理想的理论密度。