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    Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device
    4.
    发明授权
    Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device 有权
    具有电子加速层的电子发射元件，电子发射器件，发光器件，图像显示器件，冷却器件和充电器件

    公开(公告)号：US08299700B2

    公开(公告)日：2012-10-30

    申请号：US12699349

    申请日：2010-02-03

    Applicant: Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

    Inventor： Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

    IPC: G05G15/02 ,  H01J1/02 ,  H01J9/02 ,  H05B41/00

    CPC classification number: G03G15/02 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H05B33/08

    Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

    Abstract translation: 本发明的电子发射元件包括设置在电极基板和薄膜电极之间的电子加速层，该电子加速层包括（a）导电细颗粒和（b）绝缘平均粒径大于 导电细颗粒的。 电子发射元件满足以下关系式：0.3x + 3.9＆nlE; y＆nlE; 75，其中x（nm）是绝缘细颗粒的平均粒径，y（nm）是薄膜电极的厚度 这样的结构允许相对于绝缘颗粒的尺寸修改薄膜电极的厚度，从而确保导电并允许足够的电流在元件内部流动。 结果，可以从薄膜电极稳定地发射弹道电子。

    ELECTRON EMITTING DEVICE AND DRIVING METHOD THEREOF
    5.
    发明申请
    ELECTRON EMITTING DEVICE AND DRIVING METHOD THEREOF 有权
    电子发射装置及其驱动方法

    公开(公告)号：US20120126716A1

    公开(公告)日：2012-05-24

    申请号：US13292364

    申请日：2011-11-09

    Applicant: Hiroyuki HIRAKAWA

    Inventor： Hiroyuki HIRAKAWA

    IPC: H05B41/36

    CPC classification number: G09G3/22 ,  B82Y10/00 ,  G09G3/2018 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/048 ,  H01J1/312

    Abstract: A driving method of an electron emitting device which includes a first electrode, a particle layer formed on the first electrode and including insulating particles, and a second electrode formed on the particle layer includes: applying a voltage between the first and second electrodes to emit electrons from the first electrode so that the electrons are accelerated through the particle layer and emitted from the second electrode, wherein the applied voltage includes pulses which have a first frequency and are oscillated at a second frequency lower than the first frequency.

    Abstract translation: 一种电子发射器件的驱动方法，包括：第一电极，形成在第一电极上并包括绝缘粒子的粒子层和形成在粒子层上的第二电极，包括：在第一和第二电极之间施加电压以发射电子 从第一电极使得电子被加速通过粒子层并从第二电极发射，其中所施加的电压包括具有第一频率并且以低于第一频率的第二频率振荡的脉冲。

    Electron emitter formed of a dielectric material characterized by having high mechanical quality factor
    7.
    发明授权
    Electron emitter formed of a dielectric material characterized by having high mechanical quality factor 有权
    由介电材料形成的电子发射体，其特征在于具有高的机械品质因数

    公开(公告)号：US07723909B2

    公开(公告)日：2010-05-25

    申请号：US11471938

    申请日：2006-06-21

    Applicant: Hirofumi Yamaguchi ,  Kei Sato

    Inventor： Hirofumi Yamaguchi ,  Kei Sato

    IPC: H01J19/06 ,  H01J1/14

    CPC classification number: H01J1/32 ,  H01J1/312 ,  H01J2201/3125

    Abstract: A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

    Abstract translation: 电介质膜型电子发射器包括发射极部分，第一电极和第二电极。 发射极部分由多晶电介质材料的薄层形成。 构成发射极部的介电材料由具有高机械品质因数（Qm）的材料形成。 具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。 电介质材料的Qm优选为300以上，更优选为500以上。

    Surface electron emission device array and thin film transistor inspection system using the same
    8.
    发明授权
    Surface electron emission device array and thin film transistor inspection system using the same 有权
    表面电子发射器件阵列和薄膜晶体管检查系统使用相同

    公开(公告)号：US07667481B2

    公开(公告)日：2010-02-23

    申请号：US11644885

    申请日：2006-12-26

    Applicant: Chang-Wook Moon ,  El Mostafa Bourim ,  Sung-Jin Lee ,  Seung-Woon Lee

    Inventor： Chang-Wook Moon ,  El Mostafa Bourim ,  Sung-Jin Lee ,  Seung-Woon Lee

    IPC: G01R31/00

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  G02F2001/136254 ,  H01L27/1214

    Abstract: A surface electron emission device array and a TFT inspection system for inspecting a TFT array using a surface electron emission device array may be provided. The TFT inspection system may include a surface electron emission device array, which may have a first electrode disposed to face the TFT array in a first direction, a second electrode disposed in a second direction intersecting the first direction in a region corresponding to a region in which the first electrode and a corresponding pixel electrode of the TFT array may be formed, and an insulating layer interposed between the first electrode and the second electrode.

    Abstract translation: 可以提供表面电子发射器件阵列和用于使用表面电子发射器件阵列检查TFT阵列的TFT检查系统。 TFT检查系统可以包括表面电子发射器件阵列，其可以具有设置成在第一方向上面对TFT阵列的第一电极，在与第一方向相交的区域中沿与第一方向相交的第二方向上设置的第二电极 可以形成TFT阵列的第一电极和对应的像素电极，以及插入在第一电极和第二电极之间的绝缘层。

    DIELECTRIC DEVICE
    9.
    发明申请
    DIELECTRIC DEVICE 有权
    电介质设备

    公开(公告)号：US20090208774A1

    公开(公告)日：2009-08-20

    申请号：US12419499

    申请日：2009-04-07

    Applicant: Tsutomu Nanataki ,  Nobuyuki Kobayashi

    Inventor： Tsutomu Nanataki ,  Nobuyuki Kobayashi

    IPC: B32B5/18 ,  B32B15/04

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  C23C24/04 ,  H01J2329/00 ,  H01L41/1876 ,  H01L41/314 ,  Y02T50/67 ,  Y10T428/12021 ,  Y10T428/12458 ,  Y10T428/12479 ,  Y10T428/249961

    Abstract: The dielectric device includes a substrate, a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is bonded onto the substrate. The dielectric layer is bonded onto the lower electrode. The dielectric layer is obtained through thermal treatment of a film layer formed by spraying of a powdery dielectric material and a fine-particulate metal. In the thus-formed film layer, the metal is dispersed in the matrix of the dielectric material. Thermal treatment of the film layer causes migration of the metal in the film layer. This metal migration causes a lower-electrode-adjacent portion and upper-surface-adjacent portion of the dielectric layer to have different metal contents.

    Abstract translation: 电介质器件包括衬底，下电极，电介质层和上电极。 下部电极接合在基板上。 电介质层结合在下电极上。 电介质层通过热处理通过喷涂粉末介电材料和细颗粒金属形成的膜层而获得。 在如此形成的膜层中，金属分散在电介质材料的基体中。 膜层的热处理导致膜层中的金属迁移。 这种金属迁移导致电介质层的下电极相邻部分和上表面相邻部分具有不同的金属含量。

    Field emission device and its method of fabrication
    10.
    发明授权
    Field emission device and its method of fabrication 失效
    场发射装置及其制造方法

    公开(公告)号：US07531950B2

    公开(公告)日：2009-05-12

    申请号：US11488680

    申请日：2006-07-19

    Applicant: Young-Jun Park ,  Tae-Won Jeong

    Inventor： Young-Jun Park ,  Tae-Won Jeong

    IPC: H01J9/02 ,  H01J19/24

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/025

    Abstract: A field emission device has an improved structure in which electron emission from a cathode is enhanced through external light radiation. The field emission device includes: a light transmitting substrate; a cathode unit arranged on the light transmitting substrate and adapted to emit electrons, the cathode unit including: a first electrode layer of a transparent conductive material arranged on the substrate; a first electron emission layer of a semiconductive polymer organic material arranged on the first electrode layer; a second electron emission layer of a composite of a carbon-based inorganic material and a semiconductive polymer organic material arranged on the first electron emission layer; and a second electrode layer of a conductive material arranged on the second electron emission layer. The field emission device further includes an anode arranged to face the cathode unit.

    Abstract translation: 场发射器件具有改进的结构，其中来自阴极的电子发射通过外部光辐射增强。 场致发射器件包括：透光衬底; 阴极单元，布置在所述透光衬底上并适于发射电子，所述阴极单元包括：布置在所述衬底上的透明导电材料的第一电极层; 布置在第一电极层上的半导体聚合物有机材料的第一电子发射层; 布置在第一电子发射层上的碳基无机材料和半导体聚合物有机材料的复合材料的第二电子发射层; 以及布置在第二电子发射层上的导电材料的第二电极层。 场发射器件还包括布置成面对阴极单元的阳极。

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