公开(公告)号：US20030001222A1

公开(公告)日：2003-01-02

申请号：US09898321

申请日：2001-07-02

Applicant: Xerox Corporation

Inventor： Robert A. Street ,  Ping Mei ,  Jeffrey T. Rahn

IPC: H01L031/00 ,  H01L023/52

CPC classification number: H01L27/14658 ,  H01L23/5221 ,  H01L27/14643 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The signal-to-noise ratio of amorphous silicon (a-Si:H) image sensor arrays is limited by electronic noise, which is largely due to data line capacitance. To reduce data line capacitance, an air-gap (i.e., vacuum or gas-filled space) is produced at crossover points separating the data lines and gate lines. This air-gap crossover structure is formed by depositing a release material on the gate lines, forming the data lines on the release material, and then removing (etching) the release material such that the data lines form an arch extending over the gate lines. A dielectric material is then applied to strengthen the data line, and the sensor pixels are then formed.

Abstract translation: 非晶硅（a-Si：H）图像传感器阵列的信噪比受电子噪声限制，这主要是由于数据线电容。 为了减少数据线电容，在分隔数据线和栅极线的交叉点产生气隙（即，真空或气体填充的空间）。 这种气隙交叉结构通过在栅极线上沉积释放材料，在释放材料上形成数据线，然后去除（蚀刻）剥离材料，使得数据线形成在栅极线上延伸的拱形来形成。 然后施加电介质材料以加强数据线，然后形成传感器像素。