公开(公告)号：US10395613B2

公开(公告)日：2019-08-27

申请号：US15535666

申请日：2017-03-30

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Caiqin Chen ,  Yu Zhao

IPC: G09G3/36

Abstract: Disclosed is a drive control circuit, comprising a sub pixel set, a thin film transistor set, a switching unit and a driver, the driver comprises a control end, a row drive end and a column drive end, the sub pixel set comprises a plurality of sub pixels arranged in array, and the thin film transistor set comprises thin film transistors arranged in array, and one thin film transistor corresponds to one sub pixel, and the sub pixel set comprises at least one mixed sub pixel column, having at least two different sub pixels, connected to the switching unit via corresponding thin film transistors, and the control ends of the thin film transistors corresponding to the at least one mixed sub pixel column are connected to the row drive end, and the switching unit is also connected to the column drive end and the control end.

公开(公告)号：US10109648B2

公开(公告)日：2018-10-23

申请号：US14915225

申请日：2016-01-22

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yu Zhao ,  Zhandong Zhang

IPC: H01L27/12 ,  H01L29/78 ,  G02F1/13 ,  H01L29/786 ,  G02F1/1368

Abstract: The present disclosure a semiconductor layer structure having an insulating substrate and a semiconductor layer formed on the insulating substrate. The semiconductor layer includes a source signal access terminal, a drain signal access terminal, a first semiconductor layer pattern and a second semiconductor layer pattern; the first semiconductor layer pattern and the second semiconductor layer pattern formed between the source signal access terminal and the drain signal access terminal in parallel. The present disclosure also provides a method for fabricating a semiconductor layer structure.

公开(公告)号：US09647009B1

公开(公告)日：2017-05-09

申请号：US15084497

申请日：2016-03-30

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yu Zhao ,  Zhandong Zhang

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1248 ,  G02F1/136209 ,  G02F1/136213 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1255

Abstract: A TFT array substrate structure includes a patterned metal light-shielding layer that includes a plurality of metal light-shielding blocks arranged in an array and a narrowed metal strip connected between two adjacent ones of the metal light-shielding blocks. The metal light-shielding layer and a common electrode are connected to and receive a common voltage signal. For each of TFT, the pixel electrode is connected to a drain electrode of the TFT; the pixel electrode has a portion overlapping the common electrode to form a first storage capacitor; and the metal light-shielding layer has a portion overlapping the drain electrode and the pixel electrode to form a second storage capacitor. The first storage capacitor and the second storage capacitor are connected in parallel to increase the capacity of the storage capacitor. The metal light-shielding layer is arranged in a light-shielded area and thus the modification thereof does not affect aperture ratio.