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公开(公告)号:US20190109295A1
公开(公告)日:2019-04-11
申请号:US15505118
申请日:2016-12-29
Inventor: Jinming Tang , Jing Ni
CPC classification number: H01L51/5215 , H01L27/3211 , H01L27/3246 , H01L51/001 , H01L51/0011 , H01L51/0059 , H01L51/0072 , H01L51/0085 , H01L51/5016 , H01L51/5036 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5234 , H01L51/56 , H01L2227/323 , H01L2251/306 , H01L2251/308 , H01L2251/5315 , H01L2251/558
Abstract: Provided are an OLED display device and a manufacture method thereof. By respectively configuring the first transparent semiconductor layer, the second transparent semiconductor layer and the third transparent semiconductor layer in the anode layers of the red OLED element, the green OLED element, the blue OLED element, and setting the same to have various thicknesses to realize that the luminous efficiencies of the red OLED element, the green OLED element, the blue OLED element respectively achieve the best, and the first transparent semiconductor layer, the second transparent semiconductor layer and the third transparent semiconductor layer are deposited and formed by plasma enhanced chemical vapor deposition with three masks. The thicknesses of the hole transporting layers in the red OLED element, the green OLED element, the blue OLED element are the same, thus they can be formed in the same evaporation process with one common metal mask.
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公开(公告)号:US10347861B2
公开(公告)日:2019-07-09
申请号:US15505118
申请日:2016-12-29
Inventor: Jinming Tang , Jing Ni
Abstract: Provided are an OLED display device and a manufacture method thereof. By respectively configuring the first transparent semiconductor layer, the second transparent semiconductor layer and the third transparent semiconductor layer in the anode layers of the red OLED element, the green OLED element, the blue OLED element, and setting the same to have various thicknesses to realize that the luminous efficiencies of the red OLED element, the green OLED element, the blue OLED element respectively achieve the best, and the first transparent semiconductor layer, the second transparent semiconductor layer and the third transparent semiconductor layer are deposited and formed by plasma enhanced chemical vapor deposition with three masks. The thicknesses of the hole transporting layers in the red OLED element, the green OLED element, the blue OLED element are the same, thus they can be formed in the same evaporation process with one common metal mask.
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