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1.发明申请公开(公告)号：US20210184050A1
公开(公告)日：2021-06-17
申请号：US16344018
申请日：2018-11-19
Inventor： Lisheng LI , Peng HE , Yuan YAN
IPC: H01L29/786 , H01L29/66 , H01L29/10 , H01L21/02
Abstract: A low temperature polysilicon layer, a thin film transistor, and a method for manufacturing same are provided. The low temperature polysilicon layer includes a substrate, at least one buffer layer, and a polysilicon layer. The polysilicon layer is disposed on the at least one buffer layer. The polysilicon layer includes a channel region, two low doped regions disposed on two sides of the channel region, and two high doped regions disposed on an outer side of the low doped regions. Thicknesses of an edge of the channel region and at least one portion of the low doped regions are less than a thickness of another position of the polysilicon layer.
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公开(公告)号：US20200251503A1
公开(公告)日：2020-08-06
申请号：US16475137
申请日：2019-03-25
Inventor： Xin ZHANG , Lisheng LI , Peng HE
IPC: H01L27/12 , H01L29/423
Abstract: A thin film transistor (TFT) array substrate is provided. The TFT array substrate includes a display device plate and a semiconductor layer disposed on the display device plate. A thickness of the semiconductor layer is less or equal to 35 nm.
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公开(公告)号：US20210074742A1
公开(公告)日：2021-03-11
申请号：US16641663
申请日：2019-11-06
Abstract: A manufacturing method of an array substrate and the array substrate are provided. The method comprises: forming an active layer on a substrate; forming an insulation layer on the active layer; forming a first metal layer on the insulation layer; forming an interlayer dielectric layer and a pixel electrode layer on the first metal layer by a same mask; forming a second metal layer on the interlayer dielectric layer, wherein the second metal layer comprises a source electrode, a drain electrode, and a touch signal line; and forming a patterned protective layer and a patterned common electrode layer on the second metal layer.
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