公开(公告)号：US20240016062A1

公开(公告)日：2024-01-11

申请号：US17874327

申请日：2022-07-27

Applicant: United Microelectronics Corp.

Inventor： Shun-Yu Huang ,  Yi-Wei Tseng ,  Chih-Wei Kuo ,  Yi-Xiang Chen ,  Hsuan-Hsu Chen ,  Chun-Lung Chen

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02

Abstract: A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is formed on the first electrode layer. A patterned second electrode layer is formed on the MTJ stack layer and used as a mask. A first ion beam etching process is performed to etch the patterned second electrode layer and pattern the MTJ stack layer and the first electrode layer to form a second electrode, an MTJ stack structure, and a first electrode. A first protective layer is formed to cover the second electrode and the MTJ stack structure. A second ion beam etching process is performed to remove a portion of the MTJ stack structure and a portion of the first electrode.