公开(公告)号：US20200144063A1

公开(公告)日：2020-05-07

申请号：US16730343

申请日：2019-12-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

公开(公告)号：US20180166285A1

公开(公告)日：2018-06-14

申请号：US15730934

申请日：2017-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling LEE ,  Shing-Chyang PAN ,  Keng-Chu LIN ,  Wen-Cheng YANG ,  Chih-Tsung LEE ,  Victor Y. LU

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/8234

CPC classification number: H01L21/2855 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/3065 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/823437

Abstract: A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.