公开(公告)号：US20150155320A1

公开(公告)日：2015-06-04

申请号：US14093277

申请日：2013-11-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Shiu-Ko JANGJIAN ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02164 ,  H01L31/0232

Abstract: Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and a photodetector in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate, and the dielectric layer has a recess aligned with the photodetector. The image sensor device further includes a filter in the recess of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the filter.

Abstract translation: 提供了用于形成图像传感器装置的机构的实施例。 图像传感器装置包括半导体衬底和半导体衬底中的光电检测器。 图像传感器装置还包括半导体衬底上的电介质层，并且电介质层具有与光电检测器对准的凹陷。 图像传感器装置还包括在介电层的凹部中的过滤器。 此外，图像传感器装置包括介电层和半导体衬底之间并围绕过滤器的屏蔽层。

公开(公告)号：US20240021651A1

公开(公告)日：2024-01-18

申请号：US18360605

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14627 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.

公开(公告)号：US20150243805A1

公开(公告)日：2015-08-27

申请号：US14192258

申请日：2014-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L31/0232 ,  H01L31/101 ,  H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

Abstract translation: 本公开的实施例提供了一种图像传感器装置。 图像传感器装置包括：半导体衬底，包括前表面，与前表面相对的后表面，靠近前表面的感光区域和与光感测区域相邻的沟槽。 图像传感器装置包括位于沟槽中以吸收或反射入射光的遮光结构。

公开(公告)号：US20190252429A1

公开(公告)日：2019-08-15

申请号：US16398133

申请日：2019-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

公开(公告)号：US20170092684A1

公开(公告)日：2017-03-30

申请号：US14871409

申请日：2015-09-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Su-Hua CHANG ,  Volume CHIEN ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.

公开(公告)号：US20150264233A1

公开(公告)日：2015-09-17

申请号：US14211636

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Zen-Fong HUANG ,  Chia-Yu WEI ,  Chi-Cherng JENG ,  Hsin-Chi CHEN

IPC: H04N5/225

CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

公开(公告)号：US20150243696A1

公开(公告)日：2015-08-27

申请号：US14192322

申请日：2014-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Volume CHIEN ,  Kun-Huei LIN ,  Chia-Yu WEI ,  Allen TSENG ,  Chi-Cherng JENG ,  Chuan-Pu LIU

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract translation: 本公开提供了一种图像传感器装置和制造方法。 图像传感器装置包括半导体衬底和半导体衬底中的光感测区域。 图像传感器装置还包括在半导体衬底中并与光感测区相邻的遮光结构。 遮光结构的侧壁是曲面。

公开(公告)号：US20220271071A1

公开(公告)日：2022-08-25

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US20190252440A1

公开(公告)日：2019-08-15

申请号：US16390990

申请日：2019-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Shiu-Ko JANGJIAN ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02164 ,  H01L31/0232

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.

公开(公告)号：US20170069678A1

公开(公告)日：2017-03-09

申请号：US14849311

申请日：2015-09-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Volume CHIEN ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract translation: 半导体器件包括衬底，器件层，复合栅格结构，钝化层和滤色器。 器件层覆盖衬底。 复合网格结构覆盖设备层。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括金属栅格层和堆叠在金属栅格层上的电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。