公开(公告)号：US20220310800A1

公开(公告)日：2022-09-29

申请号：US17533575

申请日：2021-11-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Wei-Yen WOON ,  Cheng-Ming LIN ,  Han-Yu LIN ,  Szu-Hua CHEN

IPC: H01L29/40 ,  H01L29/417 ,  H01L21/285

Abstract: The present disclosure describes a semiconductor device and a method for forming the semiconductor device. The method includes forming a fin structure on a substrate, forming a gate structure on the fin structure, and forming a source/drain (S/D) region on the fin structure not covered by the gate structure. The method further includes forming a contact structure on the S/D region. Forming the contact structure includes forming a transition metal chalcogenide (TMC) layer on the S/D region, and forming a contact plug on the TMC layer.