公开(公告)号：US20200016635A1

公开(公告)日：2020-01-16

申请号：US16503571

申请日：2019-07-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jen HSIAO ,  Ya-Ping CHEN ,  Chien-Hung LIN ,  Wen-Pin LIU ,  Chin-Wen CHEN

IPC: B08B7/00 ,  H01L21/027 ,  G03F7/42

Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.

公开(公告)号：US20230009144A1

公开(公告)日：2023-01-12

申请号：US17591413

申请日：2022-02-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Hung LIN ,  Ko-Feng CHEN ,  Keng-Chu LIN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/306 ,  H01L21/762

Abstract: A semiconductor device with densified dielectric structures and a method of fabricating the same are disclosed. The method includes forming a fin structure, forming an isolation structure adjacent to the fin structure, forming a source/drain (S/D) region on the fin structure, depositing a flowable dielectric layer on the isolation structure, converting the flowable dielectric layer into a non-flowable dielectric layer, performing a densification process on the non-flowable dielectric layer, and repeating the depositing, converting, and performing to form a stack of densified dielectric layers surrounding the S/D region.

公开(公告)号：US20220301849A1

公开(公告)日：2022-09-22

申请号：US17206908

申请日：2021-03-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Lin CHANG ,  Chih-Chien WANG ,  Chihy-Yuan CHENG ,  Sz-Fan CHEN ,  Chien-Hung LIN ,  Chun-Chang CHEN ,  Ching-Sen KUO ,  Feng-Jia SHIU

IPC: H01L21/02 ,  H01L21/027

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.