公开(公告)号：US20200016635A1

公开(公告)日：2020-01-16

申请号：US16503571

申请日：2019-07-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jen HSIAO ,  Ya-Ping CHEN ,  Chien-Hung LIN ,  Wen-Pin LIU ,  Chin-Wen CHEN

IPC: B08B7/00 ,  H01L21/027 ,  G03F7/42

Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.