公开(公告)号：US20050263485A1

公开(公告)日：2005-12-01

申请号：US11155904

申请日：2005-06-20

申请人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

IPC分类号： G05D16/20 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/302 ,  G01R31/00

CPC分类号： G05D16/2013 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/67253 ,  Y10T137/2544

摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.

摘要翻译： 本发明提供一种在时分多路复用过程中控制室内的压力的方法。 在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。 评估该步骤的压力响应并将其与期望的压力响应进行比较。 然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。

公开(公告)号：US07959819B2

公开(公告)日：2011-06-14

申请号：US11159415

申请日：2005-06-23

申请人： Shouliang Lai ,  David Johnson ,  Russell Westerman

发明人： Shouliang Lai ,  David Johnson ,  Russell Westerman

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01L21/67253 ,  H01L21/30655 ,  H01L22/20

摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.

摘要翻译： 本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。 在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。 然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

公开(公告)号：US06924235B2

公开(公告)日：2005-08-02

申请号：US10640469

申请日：2003-08-12

申请人： David Johnson ,  Russell Westerman ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Shouliang Lai

IPC分类号： B81C99/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302

CPC分类号： H01L21/67017 ,  H01J37/3244 ,  H01L21/67069

摘要： An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.

摘要翻译： 通过本发明提供了将气体引入交替等离子体蚀刻/沉积室的改进方法。 为了最小化在沉积和蚀刻剂气体供应被打开和关闭时将压力脉冲引入到交替蚀刻/沉积室中，使用质量流量控制器来提供相对恒定的气体流。 提供气体旁路或气体排气，使得当交替蚀刻/沉积室的气体入口被关闭时，提供了用于来自质量流量控制器的气体流的替代路径。 旁路或排气管的设置将从质量流量控制器接收的气体的压力保持在基本恒定的水平。 消除或最小化气体的压力脉冲有助于增加在交替蚀刻/沉积室中在硅衬底中蚀刻的高纵横比特征的壁的平滑度。

公开(公告)号：US07381650B2

公开(公告)日：2008-06-03

申请号：US11155904

申请日：2005-06-20

申请人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

发明人： David Johnson ,  Russell Westerman ,  Mike Teixeira ,  Shouliang Lai

IPC分类号： H01L21/461 ,  H01L21/302 ,  G05D7/00

CPC分类号： G05D16/2013 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32935 ,  H01L21/67253 ,  Y10T137/2544

摘要： The present invention provides a method for controlling pressure in a chamber during a time division multiplexed process. A throttle valve is positioned based on an open-loop pressure control algorithm within at least one step of the time division multiplexed etch process. A pressure response of the step is evaluated and compared to a desired pressure response. The throttle valve is then positioned through a proportional, integral and derivative controller step to step of the time division multiplexed etch process based on the evaluation to the desired pressure response.

摘要翻译： 本发明提供一种在时分多路复用过程中控制室内的压力的方法。 在时分复用蚀刻工艺的至少一个步骤中，基于开环压力控制算法定位节流阀。 评估该步骤的压力响应并将其与期望的压力响应进行比较。 然后基于对期望的压力响应的评估，节流阀通过比例积分和微分控制器定位到步进到时分复用蚀刻工艺。

公开(公告)号：US06905626B2

公开(公告)日：2005-06-14

申请号：US10601076

申请日：2003-06-19

申请人： Russell Westerman ,  David Johnson ,  Shouliang Lai

发明人： Russell Westerman ,  David Johnson ,  Shouliang Lai

IPC分类号： B81C99/00 ,  H01L21/3065 ,  H01L21/00

CPC分类号： B81C1/00579 ,  H01L21/30655

摘要： A method of preventing notching during a cyclical etching and deposition of a substrate with an inductively coupled plasma source is provided by the present invention. In accordance with the method, the inductively coupled plasma source is pulsed to prevent charge build up on the substrate. The off state of the inductively coupled plasma source is selected to be long enough that charge bleed off can occur, but not so long that reduced etch rates result due to a low duty cycle. The pulsing may be controlled such that it only occurs when the substrate is etched such that an insulating layer is exposed. A bias voltage may also be provided to the insulating layer and the bias voltage may be pulsed in phase or out of phase with the pulsing of the inductively coupled plasma source.

摘要翻译： 本发明提供了一种在电感耦合等离子体源的循环蚀刻和衬底沉积期间防止开槽的方法。 根据该方法，电感耦合等离子体源被脉冲以防止电荷在基板上积聚。 电感耦合等离子体源的关闭状态被选择为足够长以使电荷泄漏可能发生，但不会如此长，以致由于低占空比导致降低的蚀刻速率。 可以控制脉冲，使得其仅在蚀刻基板以使得绝缘层暴露时才发生。 还可以向绝缘层提供偏置电压，并且偏置电压可以与电感耦合等离子体源的脉冲相位或异相脉冲。

公开(公告)号：US07115520B2

公开(公告)日：2006-10-03

申请号：US10815965

申请日：2004-03-31

申请人： David Johnson ,  Shouliang Lai ,  Russell Westerman

发明人： David Johnson ,  Shouliang Lai ,  Russell Westerman

IPC分类号： H01L21/461 ,  H01L21/302 ,  G05D7/00

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67253 ,  Y10T137/2544

摘要： The present invention provides a method for controlling pressure in a vacuum chamber during a time division multiplexed process. A throttle valve is pre-positioned and held for a predetermined period of time. A process gas is introduced into the vacuum chamber during the associated plasma step (deposition or etching) of the silicon wafer. At the end of the predetermined period of time, the process gas continues to flow with the throttle valve being released from the set position. At this point, the throttle valve is regulated through a proportional derivative and integral control for a period that lasts the remaining time of the associated plasma step.

摘要翻译： 本发明提供一种在时分复用过程中控制真空室中的压力的​​方法。 节气门预定位并保持预定时间段。 在硅晶片的相关等离子体步骤（沉积或蚀刻）期间，将工艺气体引入真空室。 在预定时间段结束时，处理气体继续流动，节流阀从设定位置释放。 此时，节流阀通过比例导数和积分控制进行调节，持续相关等离子体步骤的剩余时间。

公开(公告)号：US20050287815A1

公开(公告)日：2005-12-29

申请号：US11159415

申请日：2005-06-23

申请人： Shouliang Lai ,  David Johnson ,  Russell Westerman

发明人： Shouliang Lai ,  David Johnson ,  Russell Westerman

IPC分类号： C23F1/00 ,  G01L21/30 ,  G01R31/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/66

CPC分类号： H01L21/67253 ,  H01L21/30655 ,  H01L22/20

摘要： The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.

摘要翻译： 本发明提供了一种用于减小当通过交替沉积/蚀刻工艺等离子体蚀刻半导体衬底中的深沟槽时观察到的纵横比相关蚀刻的方法和装置。 在交替的沉积/蚀刻工艺期间实时地监测衬底上的多个不同尺寸的特征。 然后，基于从监视器接收的信息，在交替沉积/蚀刻工艺中调整至少一个工艺参数，以实现衬底上至少两个不同尺寸特征的等效蚀刻深度。

公开(公告)号：US07713432B2

公开(公告)日：2010-05-11

申请号：US11229319

申请日：2005-09-16

申请人： David Johnson ,  Russell Westerman

发明人： David Johnson ,  Russell Westerman

IPC分类号： C03C15/00

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/3299

摘要： The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.

摘要翻译： 本发明提供了一种用于在使用电感耦合等离子体螺旋电感器的等离子体蚀刻工艺期间改善衬底上的蚀刻均匀性的方法和装置。 等离子体装置包括真空室，用于保持基板的真空室中的支撑构件，用于向真空室提供蚀刻剂气体的蚀刻剂气体供应源，与真空室流体连通的排气，RF电源和 设置在真空室的一部分周围或附近的螺旋电感器。 提供了用于测量处理属性以产生信号给控制器的传感器，该控制器然后控制改变螺旋电感器位置的机构，从而提高等离子体蚀刻的均匀性。

公开(公告)号：US20080149597A1

公开(公告)日：2008-06-26

申请号：US11756074

申请日：2007-05-31

申请人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Larry Ryan ,  John Nolan ,  David Johnson ,  Russell Westerman

IPC分类号： B44C1/22

CPC分类号： H01J37/32623 ,  G03F1/80 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

摘要： The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.

摘要翻译： 本发明提供一种用于处理光刻基片的方法，包括将光刻基片放置在腔室中的支撑构件上，其中光刻基片具有约零摄氏度至约五十摄氏度的初始温度。 将传热流体引入室中以将光刻基板冷却至小于约零摄氏度至小于零下四十度的目标温度。 在冷却的光刻基板的温度达到初始温度之前，对冷却的光刻基板进行等离子体处理。

公开(公告)号：US20080035606A1

公开(公告)日：2008-02-14

申请号：US11834299

申请日：2007-08-06

申请人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

发明人： Jason Plumhoff ,  Sunil Srinivasan ,  David Johnson ,  Russell Westerman

IPC分类号： G01R31/00

CPC分类号： C23F4/00 ,  G03F1/54 ,  G03F1/80

摘要： The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of process conditions. The deposited film is etched from the photolithographic substrate using a second set of process conditions. An exposed surface of the photolithographic substrate is etched using a third set of process conditions. During the plasma processing of the photolithographic substrate, the critical dimension performance of the photolithographic substrate is monitored to insure that the target uniformity and feature widths are obtained by adjusting the deposition and etch plasma processing of the photolithographic substrate.

摘要翻译： 本发明提供了一种在具有薄膜的光刻基片的等离子体蚀刻工艺中提高临界尺寸性能的方法。 使用第一组工艺条件将钝化膜沉积在光刻基板上。 使用第二组工艺条件从光刻基板蚀刻沉积的膜。 使用第三组工艺条件蚀刻光刻基片的暴露表面。 在光刻基板的等离子体处理期间，监测光刻基板的临界尺寸性能，以确保通过调整光刻基板的沉积和蚀刻等离子体处理来获得目标均匀性和特征宽度。