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公开(公告)号：US10745295B2
公开(公告)日：2020-08-18
申请号：US16052980
申请日：2018-08-02
发明人： Saulius Smetona , Timothy James Bettles , Igor Agafonov , Ignas Gaska , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
摘要： A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.
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公开(公告)号：US10588335B2
公开(公告)日：2020-03-17
申请号：US16025198
申请日：2018-07-02
摘要： A solution for irradiating a surface with ultraviolet radiation is provided. A movable optical element is utilized to form a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be irradiated. The movable optical element can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
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公开(公告)号：US10453769B2
公开(公告)日：2019-10-22
申请号：US15645321
申请日：2017-07-10
发明人： Yuri Bilenko , Michael Shur , Remigijus Gaska
IPC分类号： H01L23/34 , H01L21/288 , H01L23/498 , H01L23/367 , H01L33/20 , H01L33/38 , H01L33/64
摘要： A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.
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公开(公告)号：US10369239B2
公开(公告)日：2019-08-06
申请号：US15700621
申请日：2017-09-11
摘要： A solution for cleaning and/or sterilizing one or more surfaces in a bathroom. The sterilization can be performed using ultraviolet sources, which can emit ultraviolet radiation directed onto the surface(s). The cleaning can be performed using a fluid, such as water, that is flowed over the surface(s). The surface(s) can include at least a seat of a toilet and/or other surfaces associated with the toilet.
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公开(公告)号：US10342884B2
公开(公告)日：2019-07-09
申请号：US15785687
申请日：2017-10-17
IPC分类号： A61L2/10
摘要： A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.
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公开(公告)号：US10319881B2
公开(公告)日：2019-06-11
申请号：US15390575
申请日：2016-12-26
摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
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公开(公告)号：US10297460B2
公开(公告)日：2019-05-21
申请号：US15496887
申请日：2017-04-25
发明人： Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/15 , H01L31/0256 , H01L21/308 , H01L29/66 , H01L21/02 , H01L33/12 , H01L29/20 , H01L33/00
摘要： A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
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公开(公告)号：US10199535B2
公开(公告)日：2019-02-05
申请号：US15391994
申请日：2016-12-28
IPC分类号： H01L33/12 , H01L33/32 , H01L33/06 , H01L33/46 , H01L33/00 , C30B29/40 , G06F17/50 , H01L33/14 , H01L33/40
摘要： A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.
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公开(公告)号：US10197750B2
公开(公告)日：2019-02-05
申请号：US15854332
申请日：2017-12-26
摘要： A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
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公开(公告)号：US20180346349A1
公开(公告)日：2018-12-06
申请号：US16052980
申请日：2018-08-02
发明人： Saulius Smetona , Timothy James Bettles , Igor Agafonov , Ignas Gaska , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC分类号： C02F1/325 , C02F1/001 , C02F1/008 , C02F2201/3222 , C02F2201/3226 , C02F2201/3227 , C02F2201/3228 , C02F2201/326 , C02F2201/328 , C02F2209/001 , C02F2209/005 , C02F2209/05 , C02F2209/11 , C02F2209/40 , C02F2301/026 , C02F2303/04
摘要： A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.
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