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1.发明授权Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same 有权薄膜晶体管阵列面板，液晶显示器，修复方法，滤色器阵列面板及其制造方法公开(公告)号：US08760598B2
公开(公告)日：2014-06-24
申请号：US13946674
申请日：2013-07-19
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Hyuk Lee , Bon-Yong Koo , Sun-Mi Kim , Ju Hyeon Baek , Ji Young Jeong
IPC: G02F1/1343 , G02F1/1333 , G02F1/13
CPC classification number: H01L33/08 , G02F1/133514 , G02F1/136213 , G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L22/14 , H01L27/124 , H01L29/41733 , H01L2924/0002 , H01L2924/00
Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.
Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。
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2.发明授权Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same 有权薄膜晶体管阵列面板，液晶显示器，修复方法，滤色器阵列面板及其制造方法公开(公告)号：US09093593B2
公开(公告)日：2015-07-28
申请号：US13946652
申请日：2013-07-19
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Hyuk Lee , Bon-Yong Koo , Sun-Mi Kim , Ju Hyeon Baek , Ji Young Jeong
IPC: G02F1/13 , H01L33/08 , H01L27/12 , G02F1/1335 , G02F1/1362 , H01L21/66 , H01L29/417
CPC classification number: H01L33/08 , G02F1/133514 , G02F1/136213 , G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L22/14 , H01L27/124 , H01L29/41733 , H01L2924/0002 , H01L2924/00
Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.
Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。
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3.发明申请公开(公告)号：US20130302915A1
公开(公告)日：2013-11-14
申请号：US13946674
申请日：2013-07-19
Applicant: Samsung display Co., Ltd.
Inventor： Jong-Hyuk Lee , Bon-Yong Koo , Sun-Mi Kim , Ju Hyeon Baek , Ji Young Jeong
IPC: H01L21/66
CPC classification number: H01L33/08 , G02F1/133514 , G02F1/136213 , G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L22/14 , H01L27/124 , H01L29/41733 , H01L2924/0002 , H01L2924/00
Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.
Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。
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公开(公告)号：US20130299833A1
公开(公告)日：2013-11-14
申请号：US13946652
申请日：2013-07-19
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Hyuk Lee , Bon-Yong Koo , Sun-Mi Kim , Ju Hyeon Baek , Ji Young Jeong
IPC: H01L33/08
CPC classification number: H01L33/08 , G02F1/133514 , G02F1/136213 , G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L22/14 , H01L27/124 , H01L29/41733 , H01L2924/0002 , H01L2924/00
Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.
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