METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240420961A1

    公开(公告)日:2024-12-19

    申请号:US18439271

    申请日:2024-02-12

    Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric film on a front-side surface of a substrate that has the front-side surface and a back-side surface, doping a surface of the first dielectric film with impurities to form a doped dielectric film covering at least a portion of the first dielectric film, forming a second dielectric film on the doped dielectric film, and polishing the second dielectric film by a chemical mechanical polishing (CMP) method. The doped dielectric film has a polishing rate less than a polishing rate of each of the first dielectric film and the second dielectric film.

    METHOD AND DEVICE FOR TRANSMITTING AND RECEIVING SIGNAL IN WIRELESS COMMUNICATION SYSTEM

    公开(公告)号:US20230217452A1

    公开(公告)日:2023-07-06

    申请号:US17928825

    申请日:2021-04-29

    CPC classification number: H04W72/23

    Abstract: The present disclosure relates to a method and device for transmitting and receiving a signal in a wireless communication system, and an operation method of a user equipment (UE) in the wireless communication system may include receiving, from a base station, configuration information related to carrier aggregation (CA), wherein the configuration information related to the CA includes information related to cross-carrier scheduling between a primary cell (PCell) and a secondary cell (SCell), performing configuration related to the CA, based on the configuration information related to the CA, monitoring a common search space (CSS) of the PCell on the PCell and monitoring a UE-specific search space (USS) of the SCell on the SCell, based on the performed configuration related to the CA, and receiving a physical downlink control channel (PDCCH), based on the monitoring.

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