公开(公告)号：US20200135878A1

公开(公告)日：2020-04-30

申请号：US16356378

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek OH ,  Jinwook JUNG ,  Hyeokshin KWON ,  Wontaek SEO ,  lnsu JEON

IPC: H01L29/45 ,  H01L29/16 ,  H01L29/786

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.