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公开(公告)号:US20230326949A1
公开(公告)日:2023-10-12
申请号:US18111375
申请日:2023-02-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeongyub LEE , Youngchul LEEM , Eunhyoung CHO
IPC: H01L27/146
CPC classification number: H01L27/14636 , H01L27/14625 , H01L27/14694
Abstract: Provided is an image sensor including a plurality of first electrode layers spaced apart from each other, a second electrode layer opposite to the plurality of first electrode layers, and a pixel layer provided between the plurality of first electrode layers and the second electrode layer, the pixel layer including a plurality of nanorod pixels, wherein a size of each nanorod pixel among the plurality of nanorod pixels is less than 1 μm, wherein the plurality of nanorod pixels include a first pixel including a compound semiconductor, and wherein the first pixel includes a first compound semiconductor layer doped with a first dopant, a second compound semiconductor layer that is undoped, and a third compound semiconductor layer doped with a second dopant different from the first dopant.
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公开(公告)号:US20230335676A1
公开(公告)日:2023-10-19
申请号:US17960531
申请日:2022-10-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngchul LEEM , Joosung KIM , Younghwan PARK , Dongchul SHIN , Jeongyub SEE , Junhee CHOI
CPC classification number: H01L33/24 , H01L33/007 , H01L33/12 , H01L33/38 , H01L33/44 , H01L27/156
Abstract: A nanorod light-emitting diode includes a first conductivity-type semiconductor layer including a body having a cylindrical shape, and a hexagonal pyramid shape provided on the body, an active layer covering an upper surface of the hexagonal pyramid shape, a second conductivity-type semiconductor layer covering an upper surface of the active layer, an electrode layer covering an upper surface of the second conductivity-type semiconductor layer, and an insulating layer formed to surround a side surface of the body and to expose a lower region of the side surface of the body.
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公开(公告)号:US20230144948A1
公开(公告)日:2023-05-11
申请号:US17726064
申请日:2022-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngchul LEEM , Jeongyub LEE , Haesung KIM
IPC: G02B1/00
CPC classification number: G02B1/005
Abstract: An optical device forms a refractive index distribution for exhibiting a certain phase delay profile with respect to light in a visible light wavelength, and includes a nanopattern layer including a crystalline compound having a refractive index greater than 3 with respect to the light in the visible light wavelength band and a height equal to or less than 2 μm. The nanopattern layer may include the crystalline compound grown according to a selective epitaxial growth method, and accordingly, may have a height beneficial for a manufacturing process. Thus, the efficiency of the optical device may be improved.
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公开(公告)号:US20250044480A1
公开(公告)日:2025-02-06
申请号:US18927019
申请日:2024-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngchul LEEM , Jeongyub LEE , Haesung KIM
IPC: G02B1/00
Abstract: An optical device forms a refractive index distribution for exhibiting a certain phase delay profile with respect to light in a visible light wavelength, and includes a nanopattern layer including a crystalline compound having a refractive index greater than 3 with respect to the light in the visible light wavelength band and a height equal to or less than 2 μm. The nanopattern layer may include the crystalline compound grown according to a selective epitaxial growth method, and accordingly, may have a height beneficial for a manufacturing process. Thus, the efficiency of the optical device may be improved.
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