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公开(公告)号：US20240036393A1
公开(公告)日：2024-02-01
申请号：US18378606
申请日：2023-10-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook KIM , Soo Kyung KWON , Jaeyong LEE
IPC: G02F1/13357 , G02F1/1335
CPC classification number: G02F1/133603 , G02F1/133617 , G02F1/133514
Abstract: A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.
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公开(公告)号：US20220348824A1
公开(公告)日：2022-11-03
申请号：US17866983
申请日：2022-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG
Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
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公开(公告)号：US20220119706A1
公开(公告)日：2022-04-21
申请号：US17502645
申请日：2021-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Seon-Yeong KIM , Sungwoo HWANG
IPC: C09K11/88 , C09K11/02 , H01L51/50 , G02F1/13357
Abstract: A quantum dot composite that includes a matrix; and a plurality of quantum dots and titanium oxide particles dispersed in the matrix, wherein the quantum dots include zinc, tellurium, and selenium, the quantum dots do not comprise cadmium, lead, mercury, or a combination thereof, and in the quantum dot composite, a weight ratio of tellurium with respect to titanium is greater than or equal to about 1.5:1 and less than or equal to about 10:1.
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公开(公告)号：US20220119705A1
公开(公告)日：2022-04-21
申请号：US17502542
申请日：2021-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Soo Kyung KWON , Yong Wook KIM , Seon-Yeong KIM , Ji-Yeong KIM
IPC: C09K11/88 , C09K11/02 , H01L51/50 , G02F1/13357
Abstract: Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.
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公开(公告)号：US20210371734A1
公开(公告)日：2021-12-02
申请号：US17401410
申请日：2021-08-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Yong Wook KIM , Jihyun MIN , Eun Joo JANG
IPC: C09K11/02 , C09K11/62 , H01L51/50 , G02F1/13357
Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.-
Patent Agency Ranking
公开(公告)号：US20240218248A1
公开(公告)日：2024-07-04
申请号：US18409958
申请日：2024-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Yong Wook KIM , Soo Kyung KWON , Seon-Yeong KIM , Ji-Yeong KIM
CPC classification number: C09K11/883 , C01G9/006 , C09K11/565 , C09K11/567 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , C01P2004/84 , C01P2006/60
Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.
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7.发明公开公开(公告)号：US20230287269A1
公开(公告)日：2023-09-14
申请号：US18318053
申请日：2023-05-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Jihyun MIN , Sungwoo HWANG , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/54 , C09K11/565 , C09K11/06 , C01G9/006 , C01G9/08 , G02F1/133621 , H10K59/38 , G02F2202/36 , C01P2006/60 , C01P2004/90 , C01P2004/64 , G02B6/005
Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.
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公开(公告)号：US20230183567A1
公开(公告)日：2023-06-15
申请号：US18105911
申请日：2023-02-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Yeong KIM , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Eun Joo JANG
CPC classification number: C09K11/54 , C09K11/02 , C09K11/57 , C09K11/58 , C09K11/64 , C09K11/88 , B82Y20/00
Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
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公开(公告)号：US20220056338A1
公开(公告)日：2022-02-24
申请号：US17407260
申请日：2021-08-20
Inventor： Yong Wook KIM , Yong ju KWON , Sungjee KIM , Jihyun MIN , Yuho WON , Eun Joo JANG , Hyo Sook JANG , Eunjae LEE , Kyuhyun BANG , Anastasia AGNES , Jeongmin KIM
Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
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公开(公告)号：US20220025256A1
公开(公告)日：2022-01-27
申请号：US17383814
申请日：2021-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun MIN , Eun Joo JANG , Yong Wook KIM
Abstract: A quantum dot, a quantum dot-polymer composite, and an electronic device including the same The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.
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