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    Image sensors including well regions of different concentrations and methods of fabricating the same
    1.
    发明授权
    Image sensors including well regions of different concentrations and methods of fabricating the same 有权
    图像传感器包括不同浓度的阱区域及其制造方法

    公开(公告)号：US09466636B2

    公开(公告)日：2016-10-11

    申请号：US14807992

    申请日：2015-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn ,  Yitae Kim

    IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

    Abstract: An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括与沿着光电转换部分的周边延伸的器件隔离层接触的高浓度阱区域，其可以改善图像传感器的暗电流特性。 图像传感器还包括与传输栅极重叠的器件隔离层的侧壁接触的低浓度阱区域，其可以改善图像传感器的图像滞后特性。 还讨论了相关的制造方法。

    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US10707253B2

    公开(公告)日：2020-07-07

    申请号：US15837497

    申请日：2017-12-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

    Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US11031428B2

    公开(公告)日：2021-06-08

    申请号：US16917309

    申请日：2020-06-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

    Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

    IMAGE SENSORS INCLUDNG WELL REGIONS OF DIFFERENT CONCENTRATIONS AND METHODS OF FABRICATING THE SAME
    4.
    发明申请
    IMAGE SENSORS INCLUDNG WELL REGIONS OF DIFFERENT CONCENTRATIONS AND METHODS OF FABRICATING THE SAME 审中-公开
    图像传感器包括不同浓度的良好区域及其制造方法

    公开(公告)号：US20150333100A1

    公开(公告)日：2015-11-19

    申请号：US14807992

    申请日：2015-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn ,  Yitae Kim

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

    Abstract: An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括与沿着光电转换部分的周边延伸的器件隔离层接触的高浓度阱区域，其可以改善图像传感器的暗电流特性。 图像传感器还包括与传输栅极重叠的器件隔离层的侧壁接触的低浓度阱区域，其可以改善图像传感器的图像滞后特性。 还讨论了相关的制造方法。

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US09865635B2

    公开(公告)日：2018-01-09

    申请号：US15408085

    申请日：2017-01-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Donghyuk Park ,  Seungwon Cha ,  Cheolju Kang ,  Yitae Kim ,  Jongeun Park ,  Jungchak Ahn ,  Yujung Choi

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    Abstract: An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

    Image sensors including well regions of different concentrations
    8.
    发明授权
    Image sensors including well regions of different concentrations 有权
    图像传感器包括不同浓度的井区

    公开(公告)号：US09117723B2

    公开(公告)日：2015-08-25

    申请号：US13928124

    申请日：2013-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn ,  Yitae Kim

    IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

    Abstract: An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括与沿着光电转换部分的周边延伸的器件隔离层接触的高浓度阱区域，其可以改善图像传感器的暗电流特性。 图像传感器还包括与传输栅极重叠的器件隔离层的侧壁接触的低浓度阱区域，其可以改善图像传感器的图像滞后特性。 还讨论了相关的制造方法。

    IMAGE SENSORS INCLUDING WELL REGIONS OF DIFFERENT CONCENTRATIONS
    10.
    发明申请
    IMAGE SENSORS INCLUDING WELL REGIONS OF DIFFERENT CONCENTRATIONS 有权
    图像传感器包括不同浓度的良好区域

    公开(公告)号：US20140015026A1

    公开(公告)日：2014-01-16

    申请号：US13928124

    申请日：2013-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungchak Ahn ,  Yitae Kim

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1463

    Abstract: An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括与沿着光电转换部分的周边延伸的器件隔离层接触的高浓度阱区域，其可以改善图像传感器的暗电流特性。 图像传感器还包括与传输栅极重叠的器件隔离层的侧壁接触的低浓度阱区域，其可以改善图像传感器的图像滞后特性。 还讨论了相关的制造方法。

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