Invention Grant
US09041073B2 Image sensors including channel stop regions surrounding photodiodes and methods of fabricating the same
有权
图像传感器包括围绕光电二极管的通道停止区域及其制造方法
- Patent Title: Image sensors including channel stop regions surrounding photodiodes and methods of fabricating the same
- Patent Title (中): 图像传感器包括围绕光电二极管的通道停止区域及其制造方法
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Application No.: US13928087Application Date: 2013-06-26
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Publication No.: US09041073B2Publication Date: 2015-05-26
- Inventor: Jungchak Ahn , Yitae Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2012-0076624 20120713
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146
Abstract:
Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.
Public/Granted literature
- US20140015025A1 IMAGE SENSORS INCLUDING CHANNEL STOP REGIONS SURROUNDING PHOTODIODES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-01-16
Information query
IPC分类:
