公开(公告)号：US20250093763A1

公开(公告)日：2025-03-20

申请号：US18818984

申请日：2024-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio Misaka ,  Bongkeun Kim ,  Ran Lee ,  Sanghwa Lee ,  Wonjoo Im

IPC: G03F1/24 ,  G03F7/00

Abstract: A photomask for a photolithography process includes a mask substrate, a reflective multilayer on the mask substrate, and a light absorber pattern on the reflective multilayer and having hole patterns, wherein the hole patterns include a main hole pattern for pattern transfer onto a wafer, first sub-resolution assist feature (SRAF) hole patterns arranged at regular intervals to provide honeycomb lattices in a first region centered around the main hole pattern and having a first pitch less than or equal to a diffraction limit in the photolithography process, and second SRAF hole patterns arranged at regular intervals to surround the main hole pattern and the first SRAF patterns and providing honeycomb lattices in a second region centered around the main hole pattern and surrounding the first region, the second SRAF hole patterns being arranged with a second pitch less than or equal to the diffraction limit in the photolithography process.

公开(公告)号：US20230071777A1

公开(公告)日：2023-03-09

申请号：US17739752

申请日：2022-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonjoo Im ,  Noyoung Chung ,  Sanghwa Lee

IPC: G03F7/20 ,  G03F1/36

Abstract: A method of manufacturing a semiconductor chip includes designing a layout for a semiconductor chip, performing an optical proximity correction (OPC) on the layout, manufacturing a mask after performing the OPC, and manufacturing the semiconductor chip using the mask, wherein a plurality of OPC shapes corresponding to a rectangular pattern of the mask are included in the mask and at least one of the plurality of OPC shapes includes a multi-edge corner rounding OPC shape.