公开(公告)号：US20240306376A1

公开(公告)日：2024-09-12

申请号：US18391828

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Lim ,  Sunwoo Heo ,  Soobin Kim ,  Jinsub Kim ,  Seungyoung Seo ,  Taeyong Song

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/315 ,  H10B12/482

Abstract: A semiconductor device includes a substrate including an active region; a cell gate structure disposed in the substrate, crossing the active region, and extending in a first horizontal direction; bitline structures crossing the cell gate structure and extending in a second horizontal direction intersecting the first horizontal direction; a contact plug disposed between the bitline structures; a landing pad structure disposed on the contact plug and including a lower landing pad and an upper landing pad on the lower landing pad, wherein the upper landing pad includes a cavity; a conductive pattern disposed in the cavity of the upper landing pad; and an insulating pattern structure in contact with one of the bitline structures and in contact with the landing pad structure.

公开(公告)号：US20250160676A1

公开(公告)日：2025-05-22

申请号：US18909770

申请日：2024-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wei Sun ,  Hao-Hsuan Chang ,  Se Ho Kim ,  Hao Chen ,  Doyoon Kim ,  Taeyong Song ,  Joonhyun Lee

IPC: A61B5/08 ,  A61B5/00

Abstract: An electronic device includes a processor and a microphone. The microphone is configured to send audio, from an ambient environment of the electronic device, to the processor. The processor is configured to process, based on a current step size of an audio stream segmenter, the audio received from the microphone into an audio segment. The processor is further configured to determine whether the audio segment includes a snoring sound, and set a next step size of the audio stream segmenter based on the determination whether the audio segment includes the snoring sound.

公开(公告)号：US20240057320A1

公开(公告)日：2024-02-15

申请号：US18309144

申请日：2023-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyumin KIM ,  Taeyong Song ,  Jaeyoung AN ,  Jieun LEE ,  Deoksung Hwang ,  Yejin Kwon

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/0335 ,  H10B12/315

Abstract: A semiconductor device may include bit line structures extending in one direction on a substrate, insulation structures between the bit line structures and spaced apart from each other, and a landing pad structure in each of openings between the bit line structures and the insulation structures. The landing pad structure may include a first barrier metal pattern filling a portion of the opening, a second barrier metal pattern along a surface profile of the opening on the first barrier metal pattern, and a first metal pattern on the second barrier metal pattern. The second barrier metal pattern may have end portions on the bit line structures adjacent the opening. The first metal pattern may have an upper surface higher than an upper surface of the bit line structure. An uppermost surface of the first barrier metal pattern is lower than a lowermost surface of the first metal pattern.