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公开(公告)号:US20250167012A1
公开(公告)日:2025-05-22
申请号:US18794556
申请日:2024-08-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihoon JEONG , Junho YOON , Young-Hoo KIM , Taeheon KIM , Woogwan SHIM , Jongwon LEE , Junho LEE , Jiwoong JUNG
Abstract: A substrate processing apparatus includes a stage configured to support a substrate, a rotation driving portion configured to rotate the stage around a first axis extending in a vertical direction, a first nozzle arm disposed on the stage and configured to rotate around a second axis parallel to the first axis, and a second nozzle arm disposed on the stage and configured to rotate around a third axis parallel to the second axis. The first nozzle arm includes a first nozzle supporting member extended parallel to the stage, a first connection member coupled to an end of the first nozzle supporting member, the first connection member having a stepwise shape, and a first nozzle coupled to the first connection member and configured to spray a fluidic material.
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公开(公告)号:US20240076550A1
公开(公告)日:2024-03-07
申请号:US18333154
申请日:2023-06-12
Applicant: Samsung Electronics Co., Ltd. , FOOSUNG CO., LTD.
Inventor: Hyeunwoong HONG , Woohyeop KWON , Hyeongeun AHN , Wooin JUNG , Dongkyeong KANG , Donghyun KIM , Taeheon KIM , Hyunjeong KIM , Changsu LEE , Kangyeob JEON , Jungheun MOON , Chulhwan MOON , Byungwon WOO , Jungeun LEE , Junhee LEE , Hyejeong JEONG , Taeseok LEE , Kangsan HONG , Soonkil JOUNG
Abstract: A composition for surface treatment includes fluorosilicic acid (H2SiF6) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.
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公开(公告)号:US20250125160A1
公开(公告)日:2025-04-17
申请号:US18908049
申请日:2024-10-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taeheon KIM , Junho LEE , Younghoo KIM , Junho YOON , Jongwon LEE , Jiwoong JUNG , Jihoon JEONG
IPC: H01L21/67
Abstract: A substrate processing apparatus includes a process chamber including a processing space, a substrate support configured to support a substrate in the process chamber, a fluid supply tube arranged in a lower portion of the process chamber, and a fluid supply device configured to supply a supercritical fluid to the processing space through the fluid supply tube, wherein the substrate support includes a plate structure, which is arranged in a central region of the substrate support, and on which the substrate is settled, a turbulence reduction body having a ring shape and joined to an outer portion of the plate structure, and a turbulence reduction wing joined to an outer portion of the turbulence reduction body and tilted at a certain angle toward the lower portion of the process chamber.
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