公开(公告)号：US20240395887A1

公开(公告)日：2024-11-28

申请号：US18540389

申请日：2023-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hyeon HONG ,  Su Bin Lee ,  Jeong Hyeon Lee ,  Hak Jong Lee ,  Hyun Jun Lim ,  Tae Ho Cha

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes: a substrate; an active pattern provided on the substrate and extending in a first horizontal direction; a plurality of nanosheets spaced apart from each other in a vertical direction and stacked on the active pattern; a gate electrode provided on the active pattern and extending in a second horizontal direction different from the first horizontal direction, the gate electrode surrounding each of the plurality of nanosheets; a source/drain region provided on the active pattern at two sides of the gate electrode; a first inner spacer provided between the gate electrode and the source/drain region and between adjacent nanosheets of the plurality of nanosheets, the first inner spacer being spaced apart from the plurality of nanosheets in the vertical direction; and a first barrier layer provided on a first side of the gate electrode and between the first inner spacer and one of the plurality of nanosheets.

公开(公告)号：US11069820B2

公开(公告)日：2021-07-20

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：US10658249B2

公开(公告)日：2020-05-19

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho Jo ,  Dae Joung Kim ,  Jae Mun Kim ,  Moon Han Park ,  Tae Ho Cha ,  Jae Jong Han

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.