公开(公告)号：US20190214316A1

公开(公告)日：2019-07-11

申请号：US16354735

申请日：2019-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-yoon RYU ,  Chung-sam JUN ,  Yu-sin YANG ,  Yun-jung JEE ,  Gil-woo SONG

IPC: H01L21/66 ,  G06K9/46 ,  G06K9/00 ,  G06K9/20 ,  H01L21/77

CPC classification number: H01L22/12 ,  G06K9/00013 ,  G06K9/00624 ,  G06K9/2018 ,  G06K9/4604 ,  H01L21/77 ,  H01L22/14 ,  H01L22/20 ,  H01L22/26 ,  H01L22/34

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

公开(公告)号：US20190139796A1

公开(公告)日：2019-05-09

申请号：US15956192

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-kil LEE ,  Sung-yoon RYU ,  Hyun LEE ,  Yu-sin YANG ,  Q-han PARK

IPC: H01L21/67 ,  H01L21/66

Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.

公开(公告)号：US20180061718A1

公开(公告)日：2018-03-01

申请号：US15654899

申请日：2017-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-yoon RYU ,  Chung-sam JUN ,  Yu-sin YANG ,  Yun-jung JEE ,  Gil-woo SONG

IPC: H01L21/66 ,  G06K9/46 ,  H01L21/77 ,  G06K9/00

CPC classification number: H01L22/12 ,  G06K9/00013 ,  G06K9/00624 ,  G06K9/2018 ,  G06K9/4604 ,  H01L21/77 ,  H01L22/14 ,  H01L22/26 ,  H01L22/34

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.