公开(公告)号：US20240204025A1

公开(公告)日：2024-06-20

申请号：US18526404

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeongtaek BAE ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14683

Abstract: Provided is an image sensor including a substrate including a first photoelectric conversion region, and an isolation region arranged in the substrate vertically from the first surface and defining the first photoelectric conversion region, wherein the isolation region includes a first semiconductor pattern conformally covering an inner wall of a trench, an insulating film conformally covering an inner wall of the first semiconductor pattern, a second semiconductor pattern conformally covering an inner wall of a lower portion of the insulating film, and a conductive pattern covering an inner wall of an upper portion of the insulating film and an uppermost surface and an inner wall of the second semiconductor pattern, wherein a vertical distance from the first surface to the uppermost surface of the first semiconductor pattern is substantially the same as a vertical distance from the first surface to the uppermost surface of the conductive pattern.

公开(公告)号：US20240072089A1

公开(公告)日：2024-02-29

申请号：US18310194

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor may include a substrate having a first surface and a second surface, which are opposite to each other, and micro lenses on the second surface, interconnection lines on the first surface, and a pixel isolation portion in the substrate, the pixel isolation portion configured to isolate pixels from direct contact with each other. The pixel isolation portion may include an insulating isolation pattern and a conductive pattern, wherein the conductive pattern is spaced apart from the substrate, and the insulating isolation pattern is between the substrate and the conductive pattern. The conductive pattern may include a sequential arrangement of a first conductive pattern, a second conductive pattern, and a third conductive pattern on a side surface of the insulating isolation pattern.

公开(公告)号：US20250169215A1

公开(公告)日：2025-05-22

申请号：US18746308

申请日：2024-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Seunghwi YOO ,  Jingyun KIM

IPC: H01L27/146

Abstract: Disclosed are image sensors and their fabrication methods. The image sensor comprises a semiconductor substrate having a first conductivity type and including a first surface and a second surface opposite to each other, a plurality of photoelectric conversion regions in the semiconductor substrate and having a second conductivity type, and a first pixel isolation structure between the photoelectric conversion regions that are adjacent to each other in a first direction. The first pixel isolation structure includes a first conductive pattern adjacent to the semiconductor substrate and having a shape that extends from the first surface to the second surface, an inner dielectric pattern on an inner lateral surface of the first conductive pattern, a buried dielectric pattern on the inner dielectric pattern, and an etch stop layer between the inner dielectric pattern and the buried dielectric pattern.

公开(公告)号：US20240030263A1

公开(公告)日：2024-01-25

申请号：US18183583

申请日：2023-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14623 ,  H01L27/14621

Abstract: An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.

公开(公告)号：US20240222408A1

公开(公告)日：2024-07-04

申请号：US18512600

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon NOH ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603

Abstract: An image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.

公开(公告)号：US20240145513A1

公开(公告)日：2024-05-02

申请号：US18446752

申请日：2023-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae KIM ,  Jingyun KIM ,  Byeongtaek BAE ,  Seunghwi YOO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.