公开(公告)号：US20250149336A1

公开(公告)日：2025-05-08

申请号：US18827120

申请日：2024-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghoon MOON ,  Sukkoo HONG ,  Seungchul KWON ,  Sungan DO ,  Hana KIM

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  G03F7/20 ,  H01L21/3213

Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond and having an absorbance to first light, the at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core, a photosensitive additive having an absorbance to second light having a longer wavelength than the first light, and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate based on using the photoresist composition, exposing a first area of the photoresist film to the first light, exposing an entire area of the photoresist film to the second light, and forming a network of metal structures in the first area based on baking the photoresist film.

公开(公告)号：US20160155743A1

公开(公告)日：2016-06-02

申请号：US14956049

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Kim ,  Seungchul KWON ,  Kyoungseon KIM ,  Dong-Won KIM ,  Shiyong YI

IPC: H01L27/105 ,  H01L21/306 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method for forming patterns of a semiconductor device includes forming a block copolymer layer on an underlying layer, the underlying layer including a first block copolymer having first and second polymer blocks; phase-separating the block copolymer layer to form first block portions including the first polymer block and a second block portion surrounding the first block portions and including the second polymer block; removing the first block portions to form first openings; forming block copolymer pillars to fill the first openings, the block copolymer pillars including a second block copolymer having third and fourth polymer blocks; phase-separating the block copolymer pillars to form third block portions including the third polymer block and fourth block portions including the fourth polymer block within the first openings; and removing the third block portions to form second openings.

Abstract translation: 用于形成半导体器件的图案的方法包括在下层上形成嵌段共聚物层，下层包括具有第一和第二聚合物嵌段的第一嵌段共聚物; 相分离所述嵌段共聚物层以形成包含所述第一聚合物嵌段的第一嵌段部分和围绕所述第一嵌段部分并包括所述第二聚合物嵌段的第二嵌段部分; 去除第一块部分以形成第一开口; 形成嵌段共聚物柱以填充第一开口，所述嵌段共聚物柱包括具有第三和第四聚合物嵌段的第二嵌段共聚物; 相分离嵌段共聚物柱以形成包含第三聚合物嵌段的第三嵌段部分和在第一开口内包含第四聚合物嵌段的第四嵌段部分; 并移除第三块部分以形成第二开口。