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    IMAGE SENSORS AND IMAGE CAPTURING APPARATUS INCLUDING THE SAME
    2.
    发明申请
    IMAGE SENSORS AND IMAGE CAPTURING APPARATUS INCLUDING THE SAME 有权
    图像传感器和图像捕获设备，包括它们

    公开(公告)号：US20150195467A1

    公开(公告)日：2015-07-09

    申请号：US14574463

    申请日：2014-12-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun-sub SHIM ,  Seung-sik KIM ,  Kang-sun LEE ,  Moo-sup LIM

    IPC: H04N5/369 ,  H04N5/374 ,  H04N5/225 ,  H04N9/04

    CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/2254 ,  H04N5/3696 ,  H04N9/045 ,  H04N9/077

    Abstract: Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.

    Abstract translation: 提供了包括图像传感器的图像传感器和图像捕获装置。 图像传感器包括：像素阵列，包括：多个感测像素，分别输出对应于入射光强度的图像信号; 以及彼此相邻的至少一对聚焦像素，并且各自输出入射光的相位差作为聚焦信号; 其中每个聚焦像素包括：半导体层，包括累积根据入射光中吸收的光产生的电荷的光电检测装置; 布线层，其形成在所述半导体层的第一表面上并且包括布线; 平坦化层，其具有在所述半导体层的第二表面上的第一表面; 形成在所述平坦化层中的屏蔽层，以阻挡入射到所述光电检测器件的入射光的一部分; 以及滤色器层和微透镜层。

    IMAGE GENERATING APPARATUS AND METHOD
    3.
    发明申请
    IMAGE GENERATING APPARATUS AND METHOD 有权
    图像发生装置和方法

    公开(公告)号：US20140375861A1

    公开(公告)日：2014-12-25

    申请号：US14281937

    申请日：2014-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-young JANG ,  Shuichi SHIMOKAWA ,  Seung-sik KIM

    IPC: H04N5/235 ,  H04N5/232

    CPC classification number: H04N5/2353 ,  H04N5/23232 ,  H04N5/23293 ,  H04N5/343 ,  H04N5/357

    Abstract: An image generating method of an image generating apparatus is provided. The method includes displaying a live view image on a screen of an image generating apparatus, comparing a shutter speed with a frame rate of the live view image when there is a command to image a still image during the displaying of the live view image, adding current frame data of the live view image to next frame data of the live view image to generate added next frame data when the shutter speed is smaller than the frame rate of the live view image, and reading out the added next frame data of the live view image to generate the still image.

    Abstract translation: 提供了一种图像产生装置的图像产生方法。 该方法包括在图像生成装置的屏幕上显示实时取景图像，当在实时取景图像的显示期间存在使静像成像的命令时，将快门速度与实时取景图像的帧速比较，添加 将实时取景图像的当前帧数据提供给实时取景图像的下一帧数据，以在快门速度小于实时取景图像的帧速率时生成添加的下一帧数据，并读出附加的下一帧数据 查看图像以生成静止图像。

    IMAGE SENSOR AND ELECTRONIC APPARATUS INCLUDING THE SAME
    4.
    发明申请
    IMAGE SENSOR AND ELECTRONIC APPARATUS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190148438A1

    公开(公告)日：2019-05-16

    申请号：US16045985

    申请日：2018-07-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-kyu LEE ,  Young-chan KIM ,  Seung-sik KIM

    IPC: H01L27/146 ,  H01L23/48

    Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of first interconnection lines or the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.

    IMAGE SENSOR HAVING WIDE DYNAMIC RANGE, PIXEL CIRCUIT OF THE IMAGE SENSOR, AND OPERATING METHOD OF THE IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR HAVING WIDE DYNAMIC RANGE, PIXEL CIRCUIT OF THE IMAGE SENSOR, AND OPERATING METHOD OF THE IMAGE SENSOR 有权
    具有宽动态范围的图像传感器，图像传感器的像素电路以及图像传感器的操作方法

    公开(公告)号：US20170013217A1

    公开(公告)日：2017-01-12

    申请号：US15190297

    申请日：2016-06-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-won LEE ,  Moo-sup LIM ,  Seung-sik KIM

    IPC: H04N5/378 ,  H04N5/225 ,  H04N5/376 ,  H04N5/235

    CPC classification number: H04N5/37457 ,  H04N5/23245 ,  H04N5/35563

    Abstract: A pixel circuit includes a first photocharge accumulator including at least two photodiodes exposed to light for a long period of time, and a second photocharge accumulator including at least one photodiode exposed to light for a short period of time. The pixel circuit includes a first transfer controller that transfers photocharges accumulated in the first photocharge accumulator to a floating diffusion area, and a second transfer controller that transfers photocharges accumulated in the second photocharge accumulator to the floating diffusion area. The pixel circuit includes a driving transistor to generate a pixel signal according to the photocharges transferred to the floating diffusion area. A number of photodiodes of the first photocharge accumulator is greater than a number of photodiodes of the second photocharge accumulator.

    Abstract translation: 像素电路包括：第一光电荷累加器，其包括长时间暴露于光的至少两个光电二极管;以及第二光电荷累加器，其包括在短时间内暴露于光的至少一个光电二极管。 像素电路包括：第一转印控制器，其将累积在第一光电荷累加器中的光电荷传送到浮动扩散区域;以及第二转印控制器，其将累积在第二光电荷累加器中的光电荷转移到浮动扩散区域。 像素电路包括驱动晶体管，以根据传输到浮动扩散区域的光电荷产生像素信号。 第一光电荷累加器的多个光电二极管大于第二光电荷累加器的多个光电二极管。

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