公开(公告)号：US12141480B2

公开(公告)日：2024-11-12

申请号：US18501412

申请日：2023-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik Jeon ,  Kyungbo Yang ,  Seokwon Ahn ,  Hyeonwu Kim

IPC: G06F3/06

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.

公开(公告)号：US11544006B2

公开(公告)日：2023-01-03

申请号：US17032654

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik Jeon ,  Kyungbo Yang ,  Seokwon Ahn ,  Hyeonwu Kim

IPC: G06F3/06

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.

公开(公告)号：US12216935B2

公开(公告)日：2025-02-04

申请号：US17067698

申请日：2020-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjoon Park ,  Youngho Gong ,  Hyeonwu Kim ,  Seokwon Ahn

IPC: G06F3/06

Abstract: A method of operating a storage device that includes a nonvolatile memory device and a controller that controls an operation of the nonvolatile memory device includes issuing, by the controller, a first command to the nonvolatile memory device, reading, by the nonvolatile memory device, first data from a memory cell array into a page buffer of the nonvolatile memory device, in response to the first command, issuing, by the controller, a second command to the nonvolatile memory device, and outputting, by the nonvolatile memory device to the controller, in response to the second command, status information indicating whether a read operation according to the first command has been completed and second data obtained from the page buffer of the nonvolatile memory device.

公开(公告)号：US11842082B2

公开(公告)日：2023-12-12

申请号：US18148534

申请日：2022-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongik Jeon ,  Kyungbo Yang ,  Seokwon Ahn ,  Hyeonwu Kim

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device may include a non-volatile memory including a plurality of zones, the non-volatile memory configured to sequentially store data in at least one of the plurality of zones, and a processing circuitry configured to, receive a first write command and first data from a host, the first write command including a first logical address, identify a first zone of the plurality of zones based on the first logical address, compress the first data based on compression settings corresponding to the first zone, and write the compressed first data to the first zone.