公开(公告)号：US20250120076A1

公开(公告)日：2025-04-10

申请号：US18653571

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moonkang Choi ,  Jongho Woo ,  Sangwoo Han

IPC: H10B41/27 ,  H01L25/065 ,  H10B41/10 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device and an electronic system including the device are presented. The device includes a substrate, a stacked structure with a plurality of gate electrodes on the substrate and spaced apart from each other, a first channel structure, and a second channel structure. The first channel structure includes a first channel layer extending through the stacked structure and a first ferroelectric layer positioned between the first channel layer and the stacked structure. The second channel structure includes a second channel layer with a first portion extending through the selection gate electrode, a second portion extending through the insulating pattern to contact an upper surface of the first channel layer, and a third portion protruding from a lower surface of the second portion and contacting an outer surface of the first channel layer.

公开(公告)号：US20170293893A1

公开(公告)日：2017-10-12

申请号：US15478659

申请日：2017-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeffrey S. Pierce ,  Sangwoo Han ,  Selene A. Mota Toledo ,  Mike Digman ,  Ranhee Chung

IPC: G06Q10/10 ,  G06F17/30

CPC classification number: G06Q10/1095

Abstract: A plurality of data items can be managed using a processor. The plurality of data items can be contributed by a plurality of applications. The plurality of data items can include at least scheduled events, scheduled tasks and previous activities. Information corresponding to at least the scheduled events, scheduled tasks and previous activities can be presented. The plurality of data items can be managed based on knowledge and meaning of content of the plurality of data items.

公开(公告)号：US20240397727A1

公开(公告)日：2024-11-28

申请号：US18658265

申请日：2024-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ilho Myeong ,  Yongseok Kim ,  Sangwoo Han

IPC: H10B51/20 ,  H01L25/065 ,  H01L29/78 ,  H10B51/10 ,  H10B80/00

Abstract: A semiconductor device includes: a gate line; a hole extending through the gate line; a channel layer extending lengthwise in a first direction in the hole; a ferroelectric layer arranged between the channel layer and the gate line and extending lengthwise in the first direction in the hole; and a multi-tunneling dielectric structure arranged between the ferroelectric layer and the gate line and extending lengthwise in the first direction in the hole, wherein the multi-tunneling dielectric structure includes: a first silicon oxide film contacting the gate line; a second silicon oxide film spaced apart from the first silicon oxide film in a second direction and contacting the ferroelectric layer, wherein the second direction crosses the first direction; and a silicon oxynitride film disposed between the first silicon oxide film and the second silicon oxide film.

公开(公告)号：US10860988B2

公开(公告)日：2020-12-08

申请号：US15478659

申请日：2017-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeffrey S. Pierce ,  Sangwoo Han ,  Selene A. Mota Toledo ,  Mike Digman ,  Ranhee Chung

IPC: G06Q10/10 ,  G06F9/54

Abstract: A plurality of data items can be managed using a processor. The plurality of data items can be contributed by a plurality of applications. The plurality of data items can include at least scheduled events, scheduled tasks and previous activities. Information corresponding to at least the scheduled events, scheduled tasks and previous activities can be presented. The plurality of data items can be managed based on knowledge and meaning of content of the plurality of data items.

公开(公告)号：US20250048643A1

公开(公告)日：2025-02-06

申请号：US18588712

申请日：2024-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suseong Noh ,  Sangwoo Han ,  Kwang-Soo Kim ,  Ilho Myeong

IPC: H10B51/20 ,  H10B51/30 ,  H10B51/40

Abstract: The present disclosure relates to a semiconductor device and a data storage system including the device. The semiconductor device has a substrate including a cell array region and a contact region. In the cell array region the semiconductor device has a first horizontal conductive layer, a gate stacking structure including a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. A channel structure extends in a direction crossing into the substrate by penetrating the gate stacking structure in the cell array region, and includes a channel layer connected to the substrate. Surrounding the channel layer is a ferroelectric layer. The first horizontal conductive layer is not in direct contact with the channel layer due to a dummy pattern positioned on the first horizontal conductive layer and disposed between the substrate and the ferroelectric layer.