公开(公告)号：US20230217646A1

公开(公告)日：2023-07-06

申请号：US17820231

申请日：2022-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Seungjin Kim ,  Sangchul Yang ,  Jeon Il Lee ,  Hoin Lee

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L28/91 ,  H01L28/92 ,  H01L27/10855 ,  H01L28/75

Abstract: A semiconductor device includes a vertical stack of ring-shaped electrodes that are electrically connected together into a top electrode of a capacitor, on a semiconductor substrate. A bottom electrode of the capacitor is also provided, which extends vertically in a direction orthogonal to a surface of the substrate and through centers of the vertical stack of ring-shaped electrodes. An electrically insulating bottom supporting pattern is provided, which extends between a lowermost one of the ring-shaped electrodes and an intermediate one of the ring-shaped electrodes.