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    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20220223732A1

    公开(公告)日：2022-07-14

    申请号：US17400218

    申请日：2021-08-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Tae RYU ,  Sang Hoon UHM ,  Ki Seok LEE ,  Min Su LEE ,  Won Sok LEE ,  Min Hee CHO

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/24 ,  H01L27/108

    Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20240371994A1

    公开(公告)日：2024-11-07

    申请号：US18775518

    申请日：2024-07-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Tae RYU ,  Sang Hoon UHM ,  Ki Seok LEE ,  Min Su LEE ,  Won Sok LEE ,  Min Hee CHO

    IPC: H01L29/78 ,  H01L27/088 ,  H01L29/24 ,  H10B12/00

    Abstract: A semiconductor memory device with improved performance by improving interface characteristics while reducing a leakage current, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line on a substrate, a first interlayer insulating layer exposing the conductive line and defining a channel trench on the substrate, a channel layer extending along a bottom and side surface of the channel trench, a first gate electrode and a second gate electrode spaced apart from each other in the channel trench, a first gate insulating layer between the channel layer and the first gate electrode, and a second gate insulating layer between the channel layer and the second gate electrode. The channel layer includes a first oxide semiconductor layer and a second oxide semiconductor layer sequentially stacked on the conductive line. The first oxide semiconductor layer has a greater crystallinity than the second oxide semiconductor layer.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200243608A1

    公开(公告)日：2020-07-30

    申请号：US16565553

    申请日：2019-09-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taek Soo JEON ,  Kee Won KIM ,  Sang Hoon UHM ,  Ki Joong YOON ,  Ha Jin LIM

    IPC: H01L27/28 ,  H01L27/30

    Abstract: Image sensors with improved performance and a higher degree of integration are provided. The image sensors include a substrate including a first surface and a second surface opposite to each other, a first organic photoelectric conversion layer on the first surface of the substrate, a first penetration via connected to the first organic photoelectric conversion layer and extending through the substrate, a first floating diffusion region in the substrate adjacent to the second surface of the substrate, and a first transistor structure on the second surface of the substrate, wherein the first transistor structure includes a semiconductor layer configured to connect the first penetration via and the first floating diffusion region, a gate electrode on the semiconductor layer, and a gate dielectric film between the semiconductor layer and the gate electrode.

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