公开(公告)号：US20180090492A1

公开(公告)日：2018-03-29

申请号：US15473913

申请日：2017-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rajeev RANJAN ,  Deepak SHARMA ,  Subhash KUCHANURI ,  Chul Hong PARK ,  Jae Seok YANG ,  Kwan Young CHUN

IPC: H01L27/088 ,  H01L23/528 ,  H01L27/02 ,  H01L29/06 ,  H01L27/092 ,  H01L23/522

Abstract: Integrated circuit devices are provided. The IC devices may include an active region extending in a first direction, first and second gate electrodes extending in a second direction, a first impurity region in the active region adjacent a first side of the first gate electrode, a second impurity region in the active region between a second side of the first gate electrode and a first side of the second gate electrode, a third impurity region in the active region adjacent a second side of the second gate electrode, a cross gate contact electrically connecting the first and second impurity regions, a first contact electrically connected to the third impurity region, a first wire electrically connected to the cross gate contact, and a second wire electrically connected to the first contact. The first and second wires may extend only in the first direction and may be on the same line.