公开(公告)号：US20240429307A1

公开(公告)日：2024-12-26

申请号：US18745976

申请日：2024-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rebecca PARK ,  Mehdi SAREMI ,  Ming HE ,  Muhammed AHOSAN UL KARIM ,  Aravindh KUMAR ,  Harsono SIMKA

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78

Abstract: Provided are systems, methods, and apparatuses for applying stress in transistors. In one or more examples, the systems, devices, and methods include depositing an epitaxial film on a surface between a first sidewall and a second sidewall of the transistor; depositing a dielectric over the epitaxial film and on the surface between the first sidewall and the second sidewall to increase stress in a silicon channel of the transistor; removing a polysilicon fin between the second sidewall and a third sidewall; and depositing a first metal between the second sidewall and the third sidewall based on removing the polysilicon fin.

公开(公告)号：US20240047456A1

公开(公告)日：2024-02-08

申请号：US17984042

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ming HE ,  Mehdi SAREMI ,  Rebecca PARK ,  Muhammed AHOSAN UL KARIM ,  Harsono SIMKA ,  Sungil PARK ,  Myungil KANG ,  Kyungho KIM ,  Doyoung CHOI ,  JaeHyun PARK

IPC: H01L27/088 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L27/088 ,  H01L29/41725 ,  H01L29/0607 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/785

Abstract: Provided is a three-dimensionally stacked field-effect transistor (3DSFET) device which includes: a 1st lower source/drain region and a 2nd lower source/drain region connected to each other through a 1st lower channel structure controlled by a 1st gate structure; and a 1st upper source/drain region and a 2nd upper source/drain regions, respectively above the 1st lower source/drain region and the 2nd lower source/drain region, and connected to each other through a 1st upper channel structure controlled by the 1st gate structure, wherein the 2nd lower source/drain region and the 2nd upper source/drain region form a PN junction therebetween.