公开(公告)号：US20250151258A1

公开(公告)日：2025-05-08

申请号：US18926393

申请日：2024-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： JINBUM KIM ,  DAE-JIN NAM ,  Hyojin Park ,  Soomin SON ,  GUIFU YANG ,  Kyeonggyu LEE ,  Inhae ZOH

IPC: H10B12/00

Abstract: Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.