公开(公告)号：US12147818B2

公开(公告)日：2024-11-19

申请号：US17352473

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Injong Rhee ,  Kwang-Seok Kim ,  Joonwon Park ,  Yongseok Park ,  Hyo-Jin Jung ,  Sungju Park

IPC: G06F9/451 ,  G06F3/0484 ,  G06F21/31 ,  G06F21/36 ,  G06F21/62

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

公开(公告)号：US11061698B2

公开(公告)日：2021-07-13

申请号：US15697912

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injong Rhee ,  Kwang-Seok Kim ,  Joonwon Park ,  Yongseok Park ,  Hyo-Jin Jung ,  Sungju Park

IPC: G06F9/451 ,  G06F21/62 ,  G06F21/31 ,  G06F3/0484 ,  G06F21/36

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

公开(公告)号：US20210311752A1

公开(公告)日：2021-10-07

申请号：US17352473

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Injong Rhee ,  Kwang-Seok Kim ,  Joonwon Park ,  Yongseok Park ,  Hyo-Jin Jung ,  Sungju Park

IPC: G06F9/451 ,  G06F21/62 ,  G06F21/31 ,  G06F3/0484 ,  G06F21/36

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

公开(公告)号：US10096650B2

公开(公告)日：2018-10-09

申请号：US15824366

申请日：2017-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Seok Kim ,  Kee-Won Kim ,  Whan-Kyun Kim ,  Sang-Hwan Park ,  Young-Man Jang

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.

公开(公告)号：US09837468B2

公开(公告)日：2017-12-05

申请号：US15202708

申请日：2016-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Seok Kim ,  Kee-Won Kim ,  Whan-Kyun Kim ,  Sang-Hwan Park ,  Young-Man Jang

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.